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Paper Abstract and Keywords
Presentation 2019-02-07 13:10
[Invited Talk] Stress Investigation of Annular-Trench-Isolated (ATI) Through Silicon Via (TSV)
Wei Feng, Naoya Watanabe, Haruo Shimamoto, Masahiro Aoyagi, Katsuya Kikuchi (AIST) SDM2018-93
Abstract (in Japanese) (See Japanese page) 
(in English) The methods as parylene substitute of SiO2 as dielectric layer and annular structure lose efficacy for thermal stress reduction with Through Silicon Via (TSV) scaling down. A novel Annular-Trench-Isolated (ATI) TSV structure was proposed to reduce thermal stress level in Si substrate. A ring of Si is remained between the metal core and insulator layer. The ATI TSV was successfully fabricated with two separate etching processes for the insulator parylene-HT trench and the metal solder core. The thermal stress of ATI TSV was investigated by polarized Raman spectroscopy measurements with varying temperature, indicating lower stress level than regular TSV.
Keyword (in Japanese) (See Japanese page) 
(in English) Through Silicon Via (TSV) / Thermal Stress / Polarized Raman Spectroscopy Measurements / / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 438, SDM2018-93, pp. 9-14, Feb. 2019.
Paper # SDM2018-93 
Date of Issue 2019-01-31 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2019-02-07 - 2019-02-07 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English) Backend / Assembly and Related materials technology 
Paper Information
Registration To SDM 
Conference Code 2019-02-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Stress Investigation of Annular-Trench-Isolated (ATI) Through Silicon Via (TSV) 
Sub Title (in English)  
Keyword(1) Through Silicon Via (TSV)  
Keyword(2) Thermal Stress  
Keyword(3) Polarized Raman Spectroscopy Measurements  
Keyword(4)  
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1st Author's Name Wei Feng  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Naoya Watanabe  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Haruo Shimamoto  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Masahiro Aoyagi  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Katsuya Kikuchi  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker
Date Time 2019-02-07 13:10:00 
Presentation Time 40 
Registration for SDM 
Paper # IEICE-SDM2018-93 
Volume (vol) IEICE-118 
Number (no) no.438 
Page pp.9-14 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2019-01-31 


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