講演抄録/キーワード |
講演名 |
2019-02-07 13:10
[招待講演]Stress Investigation of Annular-Trench-Isolated (ATI) Through Silicon Via (TSV) ○Wei Feng・Naoya Watanabe・Haruo Shimamoto・Masahiro Aoyagi・Katsuya Kikuchi(AIST) SDM2018-93 エレソ技報アーカイブへのリンク:SDM2018-93 |
抄録 |
(和) |
(まだ登録されていません) |
(英) |
The methods as parylene substitute of SiO2 as dielectric layer and annular structure lose efficacy for thermal stress reduction with Through Silicon Via (TSV) scaling down. A novel Annular-Trench-Isolated (ATI) TSV structure was proposed to reduce thermal stress level in Si substrate. A ring of Si is remained between the metal core and insulator layer. The ATI TSV was successfully fabricated with two separate etching processes for the insulator parylene-HT trench and the metal solder core. The thermal stress of ATI TSV was investigated by polarized Raman spectroscopy measurements with varying temperature, indicating lower stress level than regular TSV. |
キーワード |
(和) |
/ / / / / / / |
(英) |
Through Silicon Via (TSV) / Thermal Stress / Polarized Raman Spectroscopy Measurements / / / / / |
文献情報 |
信学技報, vol. 118, no. 438, SDM2018-93, pp. 9-14, 2019年2月. |
資料番号 |
SDM2018-93 |
発行日 |
2019-01-31 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
SDM2018-93 エレソ技報アーカイブへのリンク:SDM2018-93 |