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Paper Abstract and Keywords
Presentation 2019-01-29 11:00
[Invited Talk] The Relationship between Polarization Switching and Subthreshold Behavior in HfO2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study
Chengji Jin, Kyungmin Jang, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo) SDM2018-84 Link to ES Tech. Rep. Archives: SDM2018-84
Abstract (in Japanese) (See Japanese page) 
(in English) We have experimentally studied and revealed the direct relationship between polarization switching and subthreshold characteristics of HfO2-based ferroelectric FET (FeFET) and Anti-FeFET (A-FeFET) by systematically designing and fabricating devices, and monitoring Ig with high resolution. In the circumstances that charge injection prevents polarization switching from occurring in subthreshold region of FeFET, we have obtained two major findings: (1) Sub-60 subthreshold slope (SS) can be realized by adjusting Vg bias sequence, which is attributed to charge injection assisted by polarization switching. (2) Anti-ferroelectric facilitates to align polarization switching in subthreshold region and SS can be improved in A-FeFET, which is directly observed by monitoring Ig.
Keyword (in Japanese) (See Japanese page) 
(in English) Steep SS / ferroelectric HfO2 / polarization switching / / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 429, SDM2018-84, pp. 13-16, Jan. 2019.
Paper # SDM2018-84 
Date of Issue 2019-01-22 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Conference Information
Committee SDM  
Conference Date 2019-01-29 - 2019-01-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2019-01-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) The Relationship between Polarization Switching and Subthreshold Behavior in HfO2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study 
Sub Title (in English)  
Keyword(1) Steep SS  
Keyword(2) ferroelectric HfO2  
Keyword(3) polarization switching  
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1st Author's Name Chengji Jin  
1st Author's Affiliation University of Tokyo (Univ. of Tokyo)
2nd Author's Name Kyungmin Jang  
2nd Author's Affiliation University of Tokyo (Univ. of Tokyo)
3rd Author's Name Takuya Saraya  
3rd Author's Affiliation University of Tokyo (Univ. of Tokyo)
4th Author's Name Toshiro Hiramoto  
4th Author's Affiliation University of Tokyo (Univ. of Tokyo)
5th Author's Name Masaharu Kobayashi  
5th Author's Affiliation University of Tokyo (Univ. of Tokyo)
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Speaker Author-1 
Date Time 2019-01-29 11:00:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2018-84 
Volume (vol) vol.118 
Number (no) no.429 
Page pp.13-16 
#Pages
Date of Issue 2019-01-22 (SDM) 


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