Paper Abstract and Keywords |
Presentation |
2019-01-29 11:00
[Invited Talk]
The Relationship between Polarization Switching and Subthreshold Behavior in HfO2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study Chengji Jin, Kyungmin Jang, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo) SDM2018-84 Link to ES Tech. Rep. Archives: SDM2018-84 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have experimentally studied and revealed the direct relationship between polarization switching and subthreshold characteristics of HfO2-based ferroelectric FET (FeFET) and Anti-FeFET (A-FeFET) by systematically designing and fabricating devices, and monitoring Ig with high resolution. In the circumstances that charge injection prevents polarization switching from occurring in subthreshold region of FeFET, we have obtained two major findings: (1) Sub-60 subthreshold slope (SS) can be realized by adjusting Vg bias sequence, which is attributed to charge injection assisted by polarization switching. (2) Anti-ferroelectric facilitates to align polarization switching in subthreshold region and SS can be improved in A-FeFET, which is directly observed by monitoring Ig. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Steep SS / ferroelectric HfO2 / polarization switching / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 429, SDM2018-84, pp. 13-16, Jan. 2019. |
Paper # |
SDM2018-84 |
Date of Issue |
2019-01-22 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2018-84 Link to ES Tech. Rep. Archives: SDM2018-84 |
Conference Information |
Committee |
SDM |
Conference Date |
2019-01-29 - 2019-01-29 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
SDM |
Conference Code |
2019-01-SDM |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
The Relationship between Polarization Switching and Subthreshold Behavior in HfO2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study |
Sub Title (in English) |
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Keyword(1) |
Steep SS |
Keyword(2) |
ferroelectric HfO2 |
Keyword(3) |
polarization switching |
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1st Author's Name |
Chengji Jin |
1st Author's Affiliation |
University of Tokyo (Univ. of Tokyo) |
2nd Author's Name |
Kyungmin Jang |
2nd Author's Affiliation |
University of Tokyo (Univ. of Tokyo) |
3rd Author's Name |
Takuya Saraya |
3rd Author's Affiliation |
University of Tokyo (Univ. of Tokyo) |
4th Author's Name |
Toshiro Hiramoto |
4th Author's Affiliation |
University of Tokyo (Univ. of Tokyo) |
5th Author's Name |
Masaharu Kobayashi |
5th Author's Affiliation |
University of Tokyo (Univ. of Tokyo) |
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Speaker |
Author-1 |
Date Time |
2019-01-29 11:00:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2018-84 |
Volume (vol) |
vol.118 |
Number (no) |
no.429 |
Page |
pp.13-16 |
#Pages |
4 |
Date of Issue |
2019-01-22 (SDM) |