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| Presentation | 2019-01-29 09:55 [Invited Talk] Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric Field-Effect Transistors Shinji Migita, Hiroyuki Ota (AIST), Akira Thorium (U. Tokyo)  SDM2018-82 Link to ES Tech. Rep. Archives: SDM2018-82 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Steep-subthreshold swing (steep-SS) behaviors are observable in recent ferroelectric-gate field-effect transistors (FE-FETs) many times, and those reports suggest that they are caused by the negative capacitance effect (NC-Effect). However, the definition and the criteria for the NC-effect are still unclear. Therefore, it is not easy to conclude that all of those results come from the NC-effect. In this work, we prepared FE-FETs that consist of the metal-ferroelectric-metal-insulator- semiconductor (MFMIS) gates stack structures with different area ratios between MIS and MFM capacitors. We observed that the steep-SS behavior becomes remarkable in the FE-FET with appropriate capacitance ratio. We think that this phenomena is explainable from the viewpoint of redistribution of voltage in the gate stack caused by the electronic charge emerged in the process of the polarization reversal in the ferroelectric capacitors. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | steep subthreshold swing / negative capacitance / ferroelectricity / HfO2 / transistor / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 429, SDM2018-82, pp. 5-8, Jan. 2019. | |
| Paper # | SDM2018-82 | |
| Date of Issue | 2019-01-22 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2018-82 Link to ES Tech. Rep. Archives: SDM2018-82 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2019-01-29 - 2019-01-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2019-01-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric Field-Effect Transistors |
| Sub Title (in English) | |
| Keyword(1) | steep subthreshold swing |
| Keyword(2) | negative capacitance |
| Keyword(3) | ferroelectricity |
| Keyword(4) | HfO2 |
| Keyword(5) | transistor |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shinji Migita |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 2nd Author's Name | Hiroyuki Ota |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 3rd Author's Name | Akira Thorium |
| 3rd Author's Affiliation | The University of Tokyo (U. Tokyo) |
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| Speaker | Author-1 |
| Date Time | 2019-01-29 09:55:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2018-82 |
| Volume (vol) | vol.118 |
| Number (no) | no.429 |
| Page | pp.5-8 |
| #Pages | 4 |
| Date of Issue | 2019-01-22 (SDM) |
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