Paper Abstract and Keywords |
Presentation |
2019-01-29 13:45
[Invited Talk]
Interface Dipole Modulation Memory based on Multi-stacked HfO2/SiO2 MOS Structure Noriyuki Miyata (AIST), Jun Nara, Takahiro Yamasaki (NIMS), Kyoko Sumita (AIST), Ryousuke Sano, Hiroshi Nohira (TCU) SDM2018-87 Link to ES Tech. Rep. Archives: SDM2018-87 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We report an electric-field-induced interface dipole modulation (IDM) in HfO2/1-ML TiO2/SiO2 MOS stack structures. Experimental evidence for IDM was exhibited, and rearrangement of interfacial Ti-O configuration by an electric field was theoretically demonstrated to cause the potential modulation. Multi-stack HfO2/SiO2 MOSFETs with multiple dipole modulation layers are promising in terms of a low temperature process, practical memory window, and stable potential switching. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Nonvolatile memory / Interface dipole / MOSFET / Gate dielectric layer / HfO2 / SiO2 / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 429, SDM2018-87, pp. 27-30, Jan. 2019. |
Paper # |
SDM2018-87 |
Date of Issue |
2019-01-22 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2018-87 Link to ES Tech. Rep. Archives: SDM2018-87 |