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| Presentation | 2019-01-29 13:20 [Invited Talk] Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique Tadashi Yamaguchi, Tiantian Zhang, Kazuyuki Omori, Yasuhiro Shimada, Yorinobu Kunimune, Takashi Ide, Masao Inoue, Masazumi Matsuura (Renesas)  SDM2018-86 Link to ES Tech. Rep. Archives: SDM2018-86 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Highly reliable ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) film with Al nanoclusters embedded by sub-monolayer doping technique is demonstrated for the first time. Al nanoclusters increase the remnant polarization (Pr) and reduce the voltage necessary for polarization switching. Furthermore, the program and erase endurance at the cycle of more than 250k and the Pr retention at 85ºC for 10 years are achieved. Al nanoclusters are formed by the partial oxidation of sub-monolayer metallic Al embedded in HZO films. Al nanoclusters enhance the large grain growth of orthorhombic-phase HZO during FE-HZO crystallization annealing. The reduction of grain boundaries caused by the large grain growth with Al nanoclusters effectively reduces the leakage current in the HZO film. As a result, reliability of the FE HZO film is significantly improved. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Ferroelectric / Hf0.5Zr0.5O2 / Al nanocluster / Al doping / FeFET memory / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 429, SDM2018-86, pp. 21-26, Jan. 2019. | |
| Paper # | SDM2018-86 | |
| Date of Issue | 2019-01-22 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2018-86 Link to ES Tech. Rep. Archives: SDM2018-86 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2019-01-29 - 2019-01-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2019-01-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique |
| Sub Title (in English) | |
| Keyword(1) | Ferroelectric |
| Keyword(2) | Hf0.5Zr0.5O2 |
| Keyword(3) | Al nanocluster |
| Keyword(4) | Al doping |
| Keyword(5) | FeFET memory |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Tadashi Yamaguchi |
| 1st Author's Affiliation | Renesas Electronics Corp. (Renesas) |
| 2nd Author's Name | Tiantian Zhang |
| 2nd Author's Affiliation | Renesas Electronics Corp. (Renesas) |
| 3rd Author's Name | Kazuyuki Omori |
| 3rd Author's Affiliation | Renesas Electronics Corp. (Renesas) |
| 4th Author's Name | Yasuhiro Shimada |
| 4th Author's Affiliation | Renesas Electronics Corp. (Renesas) |
| 5th Author's Name | Yorinobu Kunimune |
| 5th Author's Affiliation | Renesas Electronics Corp. (Renesas) |
| 6th Author's Name | Takashi Ide |
| 6th Author's Affiliation | Renesas Electronics Corp. (Renesas) |
| 7th Author's Name | Masao Inoue |
| 7th Author's Affiliation | Renesas Electronics Corp. (Renesas) |
| 8th Author's Name | Masazumi Matsuura |
| 8th Author's Affiliation | Renesas Electronics Corp. (Renesas) |
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| Speaker | Author-1 |
| Date Time | 2019-01-29 13:20:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2018-86 |
| Volume (vol) | vol.118 |
| Number (no) | no.429 |
| Page | pp.21-26 |
| #Pages | 6 |
| Date of Issue | 2019-01-22 (SDM) |
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