Paper Abstract and Keywords |
Presentation |
2019-01-18 11:40
Fabrication and characterization of InP/InAsP/InP heterostructure nanowire LEDs Tomoya Akamatsu, Hiroki Kameda, Masahiro Sasaki, Katsuhiro Tomioka, Junichi Motohisa (Hokkaido Univ.) PN2018-77 EMT2018-111 OPE2018-186 LQE2018-196 EST2018-124 MWP2018-95 Link to ES Tech. Rep. Archives: EMT2018-111 OPE2018-186 LQE2018-196 EST2018-124 MWP2018-95 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Semiconductor nanowires (NWs), which have nanoscale footprints, enables us to realize variety of quantum structures with excellent position and size controllability, utilizing more abundant selections of materials for heterostructures. In addition, it is possible to enhance light extraction and to control spontaneous emission by controlling their size and shape. These makes NWs promising materials for light emitters applicable from visible to fiber telecom bands. In this study, we grew InP / InAsP / InP vertical heterostructure nanowires, where InAsP was embedded for active layer by selective-area metalorganic vapor phase epitaxy and fabricated vertical nanowire array LEDs as one of the efforts towards on-demand single photon emitters. The LEDs showed rectifying characteristics and electroluminescence from embedded InAsP layer in the near infrared region. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
III-V compound semiconductor / Nanowires / Light emitting diodes / Selective-area MOVPE / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 399, LQE2018-196, pp. 247-250, Jan. 2019. |
Paper # |
LQE2018-196 |
Date of Issue |
2019-01-10 (PN, EMT, OPE, LQE, EST, MWP) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
PN2018-77 EMT2018-111 OPE2018-186 LQE2018-196 EST2018-124 MWP2018-95 Link to ES Tech. Rep. Archives: EMT2018-111 OPE2018-186 LQE2018-196 EST2018-124 MWP2018-95 |
Conference Information |
Committee |
PN EMT OPE EST MWP LQE IEE-EMT |
Conference Date |
2019-01-17 - 2019-01-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Osaka University Nakanoshima Center |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
LQE |
Conference Code |
2019-01-PN-EMT-OPE-EST-MWP-LQE-EMT |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Fabrication and characterization of InP/InAsP/InP heterostructure nanowire LEDs |
Sub Title (in English) |
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Keyword(1) |
III-V compound semiconductor |
Keyword(2) |
Nanowires |
Keyword(3) |
Light emitting diodes |
Keyword(4) |
Selective-area MOVPE |
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1st Author's Name |
Tomoya Akamatsu |
1st Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
2nd Author's Name |
Hiroki Kameda |
2nd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
3rd Author's Name |
Masahiro Sasaki |
3rd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
4th Author's Name |
Katsuhiro Tomioka |
4th Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
5th Author's Name |
Junichi Motohisa |
5th Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
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Speaker |
Author-1 |
Date Time |
2019-01-18 11:40:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
PN2018-77, EMT2018-111, OPE2018-186, LQE2018-196, EST2018-124, MWP2018-95 |
Volume (vol) |
vol.118 |
Number (no) |
no.396(PN), no.397(EMT), no.398(OPE), no.399(LQE), no.400(EST), no.401(MWP) |
Page |
pp.247-250 |
#Pages |
4 |
Date of Issue |
2019-01-10 (PN, EMT, OPE, LQE, EST, MWP) |
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