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Paper Abstract and Keywords
Presentation 2019-01-18 11:40
Fabrication and characterization of InP/InAsP/InP heterostructure nanowire LEDs
Tomoya Akamatsu, Hiroki Kameda, Masahiro Sasaki, Katsuhiro Tomioka, Junichi Motohisa (Hokkaido Univ.) PN2018-77 EMT2018-111 OPE2018-186 LQE2018-196 EST2018-124 MWP2018-95
Abstract (in Japanese) (See Japanese page) 
(in English) Semiconductor nanowires (NWs), which have nanoscale footprints, enables us to realize variety of quantum structures with excellent position and size controllability, utilizing more abundant selections of materials for heterostructures. In addition, it is possible to enhance light extraction and to control spontaneous emission by controlling their size and shape. These makes NWs promising materials for light emitters applicable from visible to fiber telecom bands. In this study, we grew InP / InAsP / InP vertical heterostructure nanowires, where InAsP was embedded for active layer by selective-area metalorganic vapor phase epitaxy and fabricated vertical nanowire array LEDs as one of the efforts towards on-demand single photon emitters. The LEDs showed rectifying characteristics and electroluminescence from embedded InAsP layer in the near infrared region.
Keyword (in Japanese) (See Japanese page) 
(in English) III-V compound semiconductor / Nanowires / Light emitting diodes / Selective-area MOVPE / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 399, LQE2018-196, pp. 247-250, Jan. 2019.
Paper # LQE2018-196 
Date of Issue 2019-01-10 (PN, EMT, OPE, LQE, EST, MWP) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF PN2018-77 EMT2018-111 OPE2018-186 LQE2018-196 EST2018-124 MWP2018-95

Conference Information
Conference Date 2019-01-17 - 2019-01-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka University Nakanoshima Center 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2019-01-PN-EMT-OPE-EST-MWP-LQE-EMT 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication and characterization of InP/InAsP/InP heterostructure nanowire LEDs 
Sub Title (in English)  
Keyword(1) III-V compound semiconductor  
Keyword(2) Nanowires  
Keyword(3) Light emitting diodes  
Keyword(4) Selective-area MOVPE  
1st Author's Name Tomoya Akamatsu  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Hiroki Kameda  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Masahiro Sasaki  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Katsuhiro Tomioka  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
5th Author's Name Junichi Motohisa  
5th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Date Time 2019-01-18 11:40:00 
Presentation Time 25 
Registration for LQE 
Paper # IEICE-PN2018-77,IEICE-EMT2018-111,IEICE-OPE2018-186,IEICE-LQE2018-196,IEICE-EST2018-124,IEICE-MWP2018-95 
Volume (vol) IEICE-118 
Number (no) no.396(PN), no.397(EMT), no.398(OPE), no.399(LQE), no.400(EST), no.401(MWP) 
Page pp.247-250 
#Pages IEICE-4 
Date of Issue IEICE-PN-2019-01-10,IEICE-EMT-2019-01-10,IEICE-OPE-2019-01-10,IEICE-LQE-2019-01-10,IEICE-EST-2019-01-10,IEICE-MWP-2019-01-10 

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