IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2019-01-17 15:00
Pit-Assisted Ohmic Contact Technology for InAlGaN/GaN HEMTs
Yusuke Kumazaki, Shiro Ozaki, Yuichi Minoura, Kozo Makiyama, Toshihiro Ooki, Naoya Okamoto, Norikazu Nakamura (FUJITSU LABORATORIES LTD.) ED2018-77 MW2018-144 Link to ES Tech. Rep. Archives: ED2018-77 MW2018-144
Abstract (in Japanese) (See Japanese page) 
(in English) Low contact resistance was realized in InAlGaN/GaN HEMTs by the introduction of pit structures on the metal/InAlGaN interface. Contact resistance was strongly affected by pit morphology, and it could be roughly explained by assuming the pit structure as a parallel circuit. InAlGaN/GaN HEMT with pit-assisted ohmic contact shows low contact resistance of 0.38 Ω・mm with less variation, and exhibited improved DC characteristics. It can be concluded that the pit-assisted ohmic contact is a cost-effective practical technique to obtain a low contact resistance from a low temperature annealing.
Keyword (in Japanese) (See Japanese page) 
(in English) HEMT / Power Amplifier / Millimeter wave / InAlGaN / Ohmic / Contact resistance / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 402, ED2018-77, pp. 51-54, Jan. 2019.
Paper # ED2018-77 
Date of Issue 2019-01-10 (ED, MW) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2018-77 MW2018-144 Link to ES Tech. Rep. Archives: ED2018-77 MW2018-144

Conference Information
Committee MW ED  
Conference Date 2019-01-17 - 2019-01-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Hitachi, Central Research Lab. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound semiconductor, High speed and High frequency devices/Microwave technologies 
Paper Information
Registration To ED 
Conference Code 2019-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Pit-Assisted Ohmic Contact Technology for InAlGaN/GaN HEMTs 
Sub Title (in English)  
Keyword(1) HEMT  
Keyword(2) Power Amplifier  
Keyword(3) Millimeter wave  
Keyword(4) InAlGaN  
Keyword(5) Ohmic  
Keyword(6) Contact resistance  
Keyword(7)  
Keyword(8)  
1st Author's Name Yusuke Kumazaki  
1st Author's Affiliation FUJITSU LABORATORIES LTD. (FUJITSU LABORATORIES LTD.)
2nd Author's Name Shiro Ozaki  
2nd Author's Affiliation FUJITSU LABORATORIES LTD. (FUJITSU LABORATORIES LTD.)
3rd Author's Name Yuichi Minoura  
3rd Author's Affiliation FUJITSU LABORATORIES LTD. (FUJITSU LABORATORIES LTD.)
4th Author's Name Kozo Makiyama  
4th Author's Affiliation FUJITSU LABORATORIES LTD. (FUJITSU LABORATORIES LTD.)
5th Author's Name Toshihiro Ooki  
5th Author's Affiliation FUJITSU LABORATORIES LTD. (FUJITSU LABORATORIES LTD.)
6th Author's Name Naoya Okamoto  
6th Author's Affiliation FUJITSU LABORATORIES LTD. (FUJITSU LABORATORIES LTD.)
7th Author's Name Norikazu Nakamura  
7th Author's Affiliation FUJITSU LABORATORIES LTD. (FUJITSU LABORATORIES LTD.)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker
Date Time 2019-01-17 15:00:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2018-77,IEICE-MW2018-144 
Volume (vol) IEICE-118 
Number (no) no.402(ED), no.403(MW) 
Page pp.51-54 
#Pages IEICE-4 
Date of Issue IEICE-ED-2019-01-10,IEICE-MW-2019-01-10 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan