Paper Abstract and Keywords |
Presentation |
2018-12-18 09:00
[Invited Talk]
High-Speed Performance of InP-, Sb- and GaN-based HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT), Hiroki Fujishiro (Tokyo Univ. of Science), Takashi Mimura (NICT) ED2018-62 Link to ES Tech. Rep. Archives: ED2018-62 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have fabricated nanometer-scale InP-, Sb- and GaN-based HEMTs by using electron beam lithography and measured their characteristics. For InP-based InGaAs/InAs/InGaAs channel HEMTs, we measured cryogenic characteristics. Cutoff frequency fT and maximum oscillation frequency fmax increase under cryogenic conditions. The extent of increase for fmax is much more than that for fT. For InSb channel HEMTs, we obtained an fT of 316 GHz by using two-step-recessed gate
process. For GaN-based HEMTs, we proposed MIS-HEMTs with triple-layer insulators. We obtained an fT of 235 GHz for InAlN/AlN/GaN HEMTs with InAlN thickness of 3 nm and gate length of 45 nm. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
High Electron Mobility Transistor / HEMT / InP / Sb / GaN / Cutoff frequency / Maximum oscillation frequency / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 368, ED2018-62, pp. 35-38, Dec. 2018. |
Paper # |
ED2018-62 |
Date of Issue |
2018-12-10 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2018-62 Link to ES Tech. Rep. Archives: ED2018-62 |
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