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Paper Abstract and Keywords
Presentation 2018-12-18 11:10
Low temperature liquid phase growth of 2 dimensional layer semiconductor GaSe crystal for highly efficient THz wave source
Yohei Sato, Chao Tang, Katsuya Watanabe, Junya Ohsaki, Tadao Tanabe, Yutaka Oyama (Tohoku Univ.) ED2018-66 Link to ES Tech. Rep. Archives: ED2018-66
Abstract (in Japanese) (See Japanese page) 
(in English) We study the GaSe crystal as nonlinear optical crystal using in THz wave generation. In this report, in order to rapidly grow ingot GaSe single crystal by temperature gradient solution growth, GaSe crystal is grown from In flux which can dissolve the large amounts of GaSe and can be easily applied gradient of solutes. Grown crystal is evaluated by XRD and PL measurements and considered amount of In in the grown crystals. In addition, saturated content of GaSe in the In are measured each temperature and the speed of temperature gradient solution growth is considered from the magnitude of the solute gradient.
Keyword (in Japanese) (See Japanese page) 
(in English) GaSe / Crystal growth / Flux method / TG-DTA / InxGa1-xSe mixed crystal / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 368, ED2018-66, pp. 49-52, Dec. 2018.
Paper # ED2018-66 
Date of Issue 2018-12-10 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2018-66 Link to ES Tech. Rep. Archives: ED2018-66

Conference Information
Committee ED THz  
Conference Date 2018-12-17 - 2018-12-18 
Place (in Japanese) (See Japanese page) 
Place (in English) RIEC, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter-wave, terahertz-wave devices and systems 
Paper Information
Registration To ED 
Conference Code 2018-12-ED-THz 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low temperature liquid phase growth of 2 dimensional layer semiconductor GaSe crystal for highly efficient THz wave source 
Sub Title (in English)  
Keyword(1) GaSe  
Keyword(2) Crystal growth  
Keyword(3) Flux method  
Keyword(4) TG-DTA  
Keyword(5) InxGa1-xSe mixed crystal  
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1st Author's Name Yohei Sato  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Chao Tang  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Katsuya Watanabe  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Junya Ohsaki  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Tadao Tanabe  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Yutaka Oyama  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2018-12-18 11:10:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2018-66 
Volume (vol) vol.118 
Number (no) no.368 
Page pp.49-52 
#Pages
Date of Issue 2018-12-10 (ED) 


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