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Paper Abstract and Keywords
Presentation 2018-11-30 13:30
A new method to evaluate the degree of potential fluctuation in InGaN quantum-well laser diodes by optical-pump stimulated-emission measurements
Itsuki Oshima, Yuma Ikeda, Shigeta Sakai, A. A. Yamaguchi (Kanazawa Inst. tec.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2018-49 CPM2018-83 LQE2018-103 Link to ES Tech. Rep. Archives: ED2018-49 CPM2018-83 LQE2018-103
Abstract (in Japanese) (See Japanese page) 
(in English) It is well-known that the characteristics of InGaN quantum-well (QW) laser diodes are strongly affected by the potential fluctuation (alloy compositional fluctuation and/or well-width fluctuation) in the active layers. Various methods to evaluate the degree of the potential fluctuation, have been proposed so far, but the estimated values are sometimes different depending on the estimation method. In this study, we have theoretically investigated the effects of the potential fluctuation on the lasing characteristics and have found a new method to evaluate the degree of fluctuation from the temperature dependence of the lasing threshold excitation power density.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaN quantum-well laser diodes / Potential fluctuation / Stimulated emission / Lasing threshold / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 332, LQE2018-103, pp. 79-82, Nov. 2018.
Paper # LQE2018-103 
Date of Issue 2018-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2018-49 CPM2018-83 LQE2018-103 Link to ES Tech. Rep. Archives: ED2018-49 CPM2018-83 LQE2018-103

Conference Information
Committee ED LQE CPM  
Conference Date 2018-11-29 - 2018-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Inst. tech. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2018-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A new method to evaluate the degree of potential fluctuation in InGaN quantum-well laser diodes by optical-pump stimulated-emission measurements 
Sub Title (in English)  
Keyword(1) InGaN quantum-well laser diodes  
Keyword(2) Potential fluctuation  
Keyword(3) Stimulated emission  
Keyword(4) Lasing threshold  
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1st Author's Name Itsuki Oshima  
1st Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. tec.)
2nd Author's Name Yuma Ikeda  
2nd Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. tec.)
3rd Author's Name Shigeta Sakai  
3rd Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. tec.)
4th Author's Name A. A. Yamaguchi  
4th Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. tec.)
5th Author's Name Yuya Kanitani  
5th Author's Affiliation Sony Corporation (Sony)
6th Author's Name Shigetaka Tomiya  
6th Author's Affiliation Sony Corporation (Sony)
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Speaker Author-1 
Date Time 2018-11-30 13:30:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2018-49, CPM2018-83, LQE2018-103 
Volume (vol) vol.118 
Number (no) no.330(ED), no.331(CPM), no.332(LQE) 
Page pp.79-82 
#Pages
Date of Issue 2018-11-22 (ED, CPM, LQE) 


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