Paper Abstract and Keywords |
Presentation |
2018-11-30 13:30
A new method to evaluate the degree of potential fluctuation in InGaN quantum-well laser diodes by optical-pump stimulated-emission measurements Itsuki Oshima, Yuma Ikeda, Shigeta Sakai, A. A. Yamaguchi (Kanazawa Inst. tec.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2018-49 CPM2018-83 LQE2018-103 Link to ES Tech. Rep. Archives: ED2018-49 CPM2018-83 LQE2018-103 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
It is well-known that the characteristics of InGaN quantum-well (QW) laser diodes are strongly affected by the potential fluctuation (alloy compositional fluctuation and/or well-width fluctuation) in the active layers. Various methods to evaluate the degree of the potential fluctuation, have been proposed so far, but the estimated values are sometimes different depending on the estimation method. In this study, we have theoretically investigated the effects of the potential fluctuation on the lasing characteristics and have found a new method to evaluate the degree of fluctuation from the temperature dependence of the lasing threshold excitation power density. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InGaN quantum-well laser diodes / Potential fluctuation / Stimulated emission / Lasing threshold / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 332, LQE2018-103, pp. 79-82, Nov. 2018. |
Paper # |
LQE2018-103 |
Date of Issue |
2018-11-22 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2018-49 CPM2018-83 LQE2018-103 Link to ES Tech. Rep. Archives: ED2018-49 CPM2018-83 LQE2018-103 |
Conference Information |
Committee |
ED LQE CPM |
Conference Date |
2018-11-29 - 2018-11-30 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Inst. tech. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Semiconductor Devices, Materials, Related Technologies |
Paper Information |
Registration To |
LQE |
Conference Code |
2018-11-ED-LQE-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
A new method to evaluate the degree of potential fluctuation in InGaN quantum-well laser diodes by optical-pump stimulated-emission measurements |
Sub Title (in English) |
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Keyword(1) |
InGaN quantum-well laser diodes |
Keyword(2) |
Potential fluctuation |
Keyword(3) |
Stimulated emission |
Keyword(4) |
Lasing threshold |
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1st Author's Name |
Itsuki Oshima |
1st Author's Affiliation |
Kanazawa Institute of Technology (Kanazawa Inst. tec.) |
2nd Author's Name |
Yuma Ikeda |
2nd Author's Affiliation |
Kanazawa Institute of Technology (Kanazawa Inst. tec.) |
3rd Author's Name |
Shigeta Sakai |
3rd Author's Affiliation |
Kanazawa Institute of Technology (Kanazawa Inst. tec.) |
4th Author's Name |
A. A. Yamaguchi |
4th Author's Affiliation |
Kanazawa Institute of Technology (Kanazawa Inst. tec.) |
5th Author's Name |
Yuya Kanitani |
5th Author's Affiliation |
Sony Corporation (Sony) |
6th Author's Name |
Shigetaka Tomiya |
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Sony Corporation (Sony) |
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Speaker |
Author-1 |
Date Time |
2018-11-30 13:30:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2018-49, CPM2018-83, LQE2018-103 |
Volume (vol) |
vol.118 |
Number (no) |
no.330(ED), no.331(CPM), no.332(LQE) |
Page |
pp.79-82 |
#Pages |
4 |
Date of Issue |
2018-11-22 (ED, CPM, LQE) |
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