Paper Abstract and Keywords |
Presentation |
2018-11-30 09:25
Effects of annealing ambient on electrical properties of ALD-Al2O3/AlGaN/GaN MIS-HEMTs Keita Furuoka, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2018-42 CPM2018-76 LQE2018-96 Link to ES Tech. Rep. Archives: ED2018-42 CPM2018-76 LQE2018-96 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We conducted post-deposition annealing (PDA) and post-metalization annealing in various annealing atmosphere and evaluated the effect of annealing ambient on device characteristics of ALD-Al2O3/AlGaN/GaN MIS-HEMT. We also evaluated the Al2O3/AlGaN interface by XPS analysis. The ⊿Vth with FG-PMA decreased to 1 V at a relatively low temperature of 400℃. XPS analysis confirmed the termination of nitrogen dangling bonds by hydrogen atoms. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / MIS / HEMT / PDA / PMA / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 330, ED2018-42, pp. 45-48, Nov. 2018. |
Paper # |
ED2018-42 |
Date of Issue |
2018-11-22 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2018-42 CPM2018-76 LQE2018-96 Link to ES Tech. Rep. Archives: ED2018-42 CPM2018-76 LQE2018-96 |
Conference Information |
Committee |
ED LQE CPM |
Conference Date |
2018-11-29 - 2018-11-30 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Inst. tech. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Semiconductor Devices, Materials, Related Technologies |
Paper Information |
Registration To |
ED |
Conference Code |
2018-11-ED-LQE-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Effects of annealing ambient on electrical properties of ALD-Al2O3/AlGaN/GaN MIS-HEMTs |
Sub Title (in English) |
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Keyword(1) |
GaN |
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MIS |
Keyword(3) |
HEMT |
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PDA |
Keyword(5) |
PMA |
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1st Author's Name |
Keita Furuoka |
1st Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
2nd Author's Name |
Toshiharu Kubo |
2nd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
3rd Author's Name |
Makoto Miyoshi |
3rd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
4th Author's Name |
Takashi Egawa |
4th Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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Speaker |
Author-1 |
Date Time |
2018-11-30 09:25:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2018-42, CPM2018-76, LQE2018-96 |
Volume (vol) |
vol.118 |
Number (no) |
no.330(ED), no.331(CPM), no.332(LQE) |
Page |
pp.45-48 |
#Pages |
4 |
Date of Issue |
2018-11-22 (ED, CPM, LQE) |
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