Paper Abstract and Keywords |
Presentation |
2018-11-30 09:00
A 2.5-kV-breakdown-voltage AlGaN-channel HFET with a strain-controlled AlGaInN barrier layer Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. of Tech.) ED2018-41 CPM2018-75 LQE2018-95 Link to ES Tech. Rep. Archives: ED2018-41 CPM2018-75 LQE2018-95 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Novel AlGaN-channel heterostructures employing quaternary AlGaInN barriers were grown by metalorganic chemical vapor deposition, and their structural and electrical characteristics were evaluated. The structural characterizations confirmed that a sample with an In-rich barrier layer exhibited a small in-plane strain in the barrier layer and crack-free smooth surface morphology. The strain-controlled AlGaInN/AlGaN heterostructure showed an excellent thermal stability in its 2DEG properties even at high temperature up to 900°C. In addition, a fabricated MIS-HFET device exhibited good pinch-off characteristics with a contact resistance of 10.5 Ωmm. Furthermore, an extremely high off-state breakdown voltage of approximately 2.5 kV was obtained for the device. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Power device / AlGaN-channel HFET / MOCVD / AlGaInN / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 330, ED2018-41, pp. 41-44, Nov. 2018. |
Paper # |
ED2018-41 |
Date of Issue |
2018-11-22 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2018-41 CPM2018-75 LQE2018-95 Link to ES Tech. Rep. Archives: ED2018-41 CPM2018-75 LQE2018-95 |
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