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| Presentation | 2018-11-30 14:55 Formation of holes in GaN by MOVPE for realization of photonic-crystal lasers Tomoaki Koizumi, Kei Emoto (Stanley Electric CO., LTD.), Kenji Ishizaki, De Zoysa Menaka, Yochinori Tanaka (Kyoto Univ.), Junichi Sonoda (Stanley Electric CO., LTD.), Susumu Noda (Kyoto Univ.)  ED2018-52 CPM2018-86 LQE2018-106 Link to ES Tech. Rep. Archives: ED2018-52 CPM2018-86 LQE2018-106 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this report, we propose fabrication methods of air-hole-embedded photonic-crystals to realize blue-violet GaN-based photonic-crystal lasers. First we utilize the mass-transport technique at various temperatures to embed the air-holes into GaN layers. We discuss the embedding-mechanism based on the mass-transportation in detail, and also the surface morphology. In addition, we also propose a new embedding technique by combining selective {1-101} facet growth and post-annealing. We found that the new technique is effective for embedding holes in GaN films with flat surface morphology (roughness < 0.4nm). This new fabrication technique is expected to realize blue-violet GaN-based photonic-crystal surface emitting lasers with high quality active layers. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Photonic crystal laser / Laser diode / Photonic crystal / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 332, LQE2018-106, pp. 91-94, Nov. 2018. | |
| Paper # | LQE2018-106 | |
| Date of Issue | 2018-11-22 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2018-52 CPM2018-86 LQE2018-106 Link to ES Tech. Rep. Archives: ED2018-52 CPM2018-86 LQE2018-106 |
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| Conference Information | |
| Committee | ED LQE CPM |
| Conference Date | 2018-11-29 - 2018-11-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2018-11-ED-LQE-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of holes in GaN by MOVPE for realization of photonic-crystal lasers |
| Sub Title (in English) | |
| Keyword(1) | Photonic crystal laser |
| Keyword(2) | Laser diode |
| Keyword(3) | Photonic crystal |
| Keyword(4) | |
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| 1st Author's Name | Tomoaki Koizumi |
| 1st Author's Affiliation | Stanley Electric CO., LTD. (Stanley Electric CO., LTD.) |
| 2nd Author's Name | Kei Emoto |
| 2nd Author's Affiliation | Stanley Electric CO., LTD. (Stanley Electric CO., LTD.) |
| 3rd Author's Name | Kenji Ishizaki |
| 3rd Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 4th Author's Name | De Zoysa Menaka |
| 4th Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 5th Author's Name | Yochinori Tanaka |
| 5th Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 6th Author's Name | Junichi Sonoda |
| 6th Author's Affiliation | Stanley Electric CO., LTD. (Stanley Electric CO., LTD.) |
| 7th Author's Name | Susumu Noda |
| 7th Author's Affiliation | Kyoto University (Kyoto Univ.) |
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| Speaker | Author-1 |
| Date Time | 2018-11-30 14:55:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2018-52, CPM2018-86, LQE2018-106 |
| Volume (vol) | vol.118 |
| Number (no) | no.330(ED), no.331(CPM), no.332(LQE) |
| Page | pp.91-94 |
| #Pages | 4 |
| Date of Issue | 2018-11-22 (ED, CPM, LQE) |
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