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Paper Abstract and Keywords
Presentation 2018-11-30 12:40
GaN-based verticalcavity surfaceemitting lasers with buried SiO2 optical waveguide structures
Iida Ryosuke (Meijo Univ.), Natsumi Hayashi, Wataru Muranaga, Syo Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2018-47 CPM2018-81 LQE2018-101 Link to ES Tech. Rep. Archives: ED2018-47 CPM2018-81 LQE2018-101
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated buried SiO2 optical waveguide structures towards low threshold current in GaN-based vertical cavity surface emitting lasers (VCSELs). In this study, a relation between the buried SiO2 thickness and all the possible modes were calculated. Then, we have optimized a fabrication process of the structure with a sufficient buried SiO2 thickness. Finally, we fabricated GaN-based VCSELs with the buried SiO2 structure. We then demonstrated a room-temperature continuous-wave operation of the VCSEL, showing a reduction of the threshold current and the operation with higher-order modes due to waveguide structure. The maximum light output power was 2.7 mW, and an external differential quantum efficiency was 11%.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / VCSEL / waveguide / / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 332, LQE2018-101, pp. 71-74, Nov. 2018.
Paper # LQE2018-101 
Date of Issue 2018-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2018-47 CPM2018-81 LQE2018-101 Link to ES Tech. Rep. Archives: ED2018-47 CPM2018-81 LQE2018-101

Conference Information
Committee ED LQE CPM  
Conference Date 2018-11-29 - 2018-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Inst. tech. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2018-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) GaN-based verticalcavity surfaceemitting lasers with buried SiO2 optical waveguide structures 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) VCSEL  
Keyword(3) waveguide  
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1st Author's Name Iida Ryosuke  
1st Author's Affiliation Meijo University (Meijo Univ.)
2nd Author's Name Natsumi Hayashi  
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3rd Author's Name Wataru Muranaga  
3rd Author's Affiliation Meijo University (Meijo Univ.)
4th Author's Name Syo Iwayama  
4th Author's Affiliation Meijo University (Meijo Univ.)
5th Author's Name Tetsuya Takeuchi  
5th Author's Affiliation Meijo University (Meijo Univ.)
6th Author's Name Satoshi Kamiyama  
6th Author's Affiliation Meijo University (Meijo Univ.)
7th Author's Name Motoaki Iwaya  
7th Author's Affiliation Meijo University (Meijo Univ.)
8th Author's Name Isamu Akasaki  
8th Author's Affiliation Meijo University/Nagoya University (Meijo Univ./Nagoya Univ.)
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Speaker Author-1 
Date Time 2018-11-30 12:40:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2018-47, CPM2018-81, LQE2018-101 
Volume (vol) vol.118 
Number (no) no.330(ED), no.331(CPM), no.332(LQE) 
Page pp.71-74 
#Pages
Date of Issue 2018-11-22 (ED, CPM, LQE) 


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