Paper Abstract and Keywords |
Presentation |
2018-11-30 12:40
GaN-based verticalcavity surfaceemitting lasers with buried SiO2 optical waveguide structures Iida Ryosuke (Meijo Univ.), Natsumi Hayashi, Wataru Muranaga, Syo Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2018-47 CPM2018-81 LQE2018-101 Link to ES Tech. Rep. Archives: ED2018-47 CPM2018-81 LQE2018-101 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have investigated buried SiO2 optical waveguide structures towards low threshold current in GaN-based vertical cavity surface emitting lasers (VCSELs). In this study, a relation between the buried SiO2 thickness and all the possible modes were calculated. Then, we have optimized a fabrication process of the structure with a sufficient buried SiO2 thickness. Finally, we fabricated GaN-based VCSELs with the buried SiO2 structure. We then demonstrated a room-temperature continuous-wave operation of the VCSEL, showing a reduction of the threshold current and the operation with higher-order modes due to waveguide structure. The maximum light output power was 2.7 mW, and an external differential quantum efficiency was 11%. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / VCSEL / waveguide / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 332, LQE2018-101, pp. 71-74, Nov. 2018. |
Paper # |
LQE2018-101 |
Date of Issue |
2018-11-22 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2018-47 CPM2018-81 LQE2018-101 Link to ES Tech. Rep. Archives: ED2018-47 CPM2018-81 LQE2018-101 |
Conference Information |
Committee |
ED LQE CPM |
Conference Date |
2018-11-29 - 2018-11-30 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Inst. tech. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Semiconductor Devices, Materials, Related Technologies |
Paper Information |
Registration To |
LQE |
Conference Code |
2018-11-ED-LQE-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
GaN-based verticalcavity surfaceemitting lasers with buried SiO2 optical waveguide structures |
Sub Title (in English) |
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Keyword(1) |
GaN |
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VCSEL |
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waveguide |
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1st Author's Name |
Iida Ryosuke |
1st Author's Affiliation |
Meijo University (Meijo Univ.) |
2nd Author's Name |
Natsumi Hayashi |
2nd Author's Affiliation |
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3rd Author's Name |
Wataru Muranaga |
3rd Author's Affiliation |
Meijo University (Meijo Univ.) |
4th Author's Name |
Syo Iwayama |
4th Author's Affiliation |
Meijo University (Meijo Univ.) |
5th Author's Name |
Tetsuya Takeuchi |
5th Author's Affiliation |
Meijo University (Meijo Univ.) |
6th Author's Name |
Satoshi Kamiyama |
6th Author's Affiliation |
Meijo University (Meijo Univ.) |
7th Author's Name |
Motoaki Iwaya |
7th Author's Affiliation |
Meijo University (Meijo Univ.) |
8th Author's Name |
Isamu Akasaki |
8th Author's Affiliation |
Meijo University/Nagoya University (Meijo Univ./Nagoya Univ.) |
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Speaker |
Author-1 |
Date Time |
2018-11-30 12:40:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2018-47, CPM2018-81, LQE2018-101 |
Volume (vol) |
vol.118 |
Number (no) |
no.330(ED), no.331(CPM), no.332(LQE) |
Page |
pp.71-74 |
#Pages |
4 |
Date of Issue |
2018-11-22 (ED, CPM, LQE) |
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