IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2018-11-30 09:50
Chemical Bath Deposition of Undoped and Li Doped CuO Films and Thier Structural and Electrical Properties
Hideyuki Okada, Tomoaki Terasako, Kenji Gochoh, Naoya Hayashimoto (Ehime Univ.) ED2018-43 CPM2018-77 LQE2018-97 Link to ES Tech. Rep. Archives: ED2018-43 CPM2018-77 LQE2018-97
Abstract (in Japanese) (See Japanese page) 
(in English) Undoped and Li-doped CuO films were grown on Au seed layers by chemical bath deposition (CBD) using the mixed aqueous solutions of Cu(NO3)2・3H2O and LiNO3. Surfaces of the undoped and Li-doped films were covered with the randomly distributed needle-like nanostructures, and their cross sections were composed of the plate-like grains. For the undoped films, the increase in the grain size of the Au seed layer resulted in the increase in the average grain size of the needle-like nanostructures and the decrease in the resistivity. However, both the grain size of the needle-like nanostructure and resistivity were independent of the concentration of the CBD solution. For the Li doped films, the average grain size of the needle-like nanostructures increased with increasing the LiNO3 concentration in the CBD solution. Minimum resistivity values of the Li doped films were achieved in the LiNO3 concentration range from 3 to 5 μM.
Keyword (in Japanese) (See Japanese page) 
(in English) CuO / Chemical Bath Deposition / Seed Layer / X-ray Diffraction / Scanning Electron Microscope / Resistivity / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 331, CPM2018-77, pp. 49-54, Nov. 2018.
Paper # CPM2018-77 
Date of Issue 2018-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2018-43 CPM2018-77 LQE2018-97 Link to ES Tech. Rep. Archives: ED2018-43 CPM2018-77 LQE2018-97

Conference Information
Committee ED LQE CPM  
Conference Date 2018-11-29 - 2018-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Inst. tech. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To CPM 
Conference Code 2018-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Chemical Bath Deposition of Undoped and Li Doped CuO Films and Thier Structural and Electrical Properties 
Sub Title (in English)  
Keyword(1) CuO  
Keyword(2) Chemical Bath Deposition  
Keyword(3) Seed Layer  
Keyword(4) X-ray Diffraction  
Keyword(5) Scanning Electron Microscope  
Keyword(6) Resistivity  
Keyword(7)  
Keyword(8)  
1st Author's Name Hideyuki Okada  
1st Author's Affiliation Ehime University (Ehime Univ.)
2nd Author's Name Tomoaki Terasako  
2nd Author's Affiliation Ehime University (Ehime Univ.)
3rd Author's Name Kenji Gochoh  
3rd Author's Affiliation Ehime University (Ehime Univ.)
4th Author's Name Naoya Hayashimoto  
4th Author's Affiliation Ehime University (Ehime Univ.)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-2 
Date Time 2018-11-30 09:50:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # ED2018-43, CPM2018-77, LQE2018-97 
Volume (vol) vol.118 
Number (no) no.330(ED), no.331(CPM), no.332(LQE) 
Page pp.49-54 
#Pages
Date of Issue 2018-11-22 (ED, CPM, LQE) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan