We have proposed multiple silicon qubits with stacked structure. The qubits and single electron transistors (SETs) for reading the quantum states are integrated in the same device. The multiple qubits in the device share the same gate electrode and so do SETs. In this way, the operation of the multiple qubits and reading their quantum states can be realized by applying voltages to the shared gate electrodes. In this presentation, the fabrication process flow for the device and the simulation result of reading the quantum states are reported.