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Paper Abstract and Keywords
Presentation 2018-11-22 15:10
[Poster Presentation] High-Frequency Equivalent Circuit Model for High- Density Through-Silicon-Via
Kibeom Kim, Seungyoung Ahn (KAIST) EMCJ2018-67
Abstract (in Japanese) (See Japanese page) 
(in English) (Not available yet)
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Reference Info. IEICE Tech. Rep., vol. 118, no. 317, EMCJ2018-67, pp. 37-37, Nov. 2018.
Paper # EMCJ2018-67 
Date of Issue 2018-11-15 (EMCJ) 
ISSN Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee EMCJ IEE-EMC IEE-MAG  
Conference Date 2018-11-22 - 2018-11-23 
Place (in Japanese) (See Japanese page) 
Place (in English) KAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) EMC Joint Workshop 2018, Daejon 
Paper Information
Registration To EMCJ 
Conference Code 2018-11-EMCJ-EMC-MAG 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High-Frequency Equivalent Circuit Model for High- Density Through-Silicon-Via 
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1st Author's Name Kibeom Kim  
1st Author's Affiliation Korea Advanced Institute of Science and Technology (KAIST)
2nd Author's Name Seungyoung Ahn  
2nd Author's Affiliation Korea Advanced Institute of Science and Technology (KAIST)
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Date Time 2018-11-22 15:10:00 
Presentation Time 60 minutes 
Registration for EMCJ 
Paper # EMCJ2018-67 
Volume (vol) vol.118 
Number (no) no.317 
Page p.37 
#Pages
Date of Issue 2018-11-15 (EMCJ) 


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