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| Presentation | 2018-11-09 14:20 [Invited Talk] Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST)  SDM2018-74 Link to ES Tech. Rep. Archives: SDM2018-74 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We consider the method to simulate negative-capacitance field-effect transistors (NC FETs) harnessing negative capacitance of a ferroelectric film used as a gate insulator and propose a method completely applicable to technology computer-aided design device simulators. In this method, the behavior of the polarization in ferroelectrics is described by a Landau-Khalatnikov equation and it can be solved simultaneously with the other equations governing NC FETs such as the Poisson equation and electron and hole current continuity equations. We simulate NC FETs using the method and show the possibility of their expected steep-slope switching. Also, owing to its high extensibility, the proposed method enables the device simulators to take into account a factor related to the domain structure formation in the polarization field of ferroelectrics. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | ferroelectrics / negative capacitance / field-effect transistors / device simulation / TCAD / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 291, SDM2018-74, pp. 47-52, Nov. 2018. | |
| Paper # | SDM2018-74 | |
| Date of Issue | 2018-11-01 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2018-74 Link to ES Tech. Rep. Archives: SDM2018-74 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2018-11-08 - 2018-11-09 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2018-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance |
| Sub Title (in English) | |
| Keyword(1) | ferroelectrics |
| Keyword(2) | negative capacitance |
| Keyword(3) | field-effect transistors |
| Keyword(4) | device simulation |
| Keyword(5) | TCAD |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Junichi Hattori |
| 1st Author's Affiliation | AIST (AIST) |
| 2nd Author's Name | Tsutomu Ikegami |
| 2nd Author's Affiliation | AIST (AIST) |
| 3rd Author's Name | Koichi Fukuda |
| 3rd Author's Affiliation | AIST (AIST) |
| 4th Author's Name | Hiroyuki Ota |
| 4th Author's Affiliation | AIST (AIST) |
| 5th Author's Name | Shinji Migita |
| 5th Author's Affiliation | AIST (AIST) |
| 6th Author's Name | Hidehiro Asai |
| 6th Author's Affiliation | AIST (AIST) |
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| Speaker | Author-1 |
| Date Time | 2018-11-09 14:20:00 |
| Presentation Time | 60 minutes |
| Registration for | SDM |
| Paper # | SDM2018-74 |
| Volume (vol) | vol.118 |
| Number (no) | no.291 |
| Page | pp.47-52 |
| #Pages | 6 |
| Date of Issue | 2018-11-01 (SDM) |
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