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Paper Abstract and Keywords
Presentation 2018-11-09 15:55
[Invited Talk] Characteristics and Ultralow Voltage Rectification Experiment on MOS Diode connection using Super Steep SS PN-Body Tied SOI-FET
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-76 Link to ES Tech. Rep. Archives: SDM2018-76
Abstract (in Japanese) (See Japanese page) 
(in English) In order to utilize the Radio Frequency (RF) signal power existing in the living environment, a RF rectifier that realizes high power conversion efficiency is necessary. The RF rectifier is required to work in µW or nW class, and it is important to develop a new diode functioning as a rectifying element at ultralow voltage and high frequency. The current-voltage characteristics of conventional p-n junction diodes and Schottky Barrier Diodes rise exponentially. However, it is become tangential line when expanded on an ultralow voltage range. Therefore, it is difficult to rectify an ultralow AC signal. In this paper, we have investigated the static characteristics and ultralow voltage rectification experiment by MOS Diode connection of PN-Body Tied SOI-FET (PNBT) with steep Subthreshold Slope (SS) proposed by us. Sharp-turn-on characteristics appeared at under 0.1 V when PNBT was used, also, half-wave rectified waveform was confirmed even with input amplitude of 10mV. PNBT has a hole charging mechanism and the inherent thyristor structure, operation speed is concerned. However, PNBT operation up to 30 MHz was confirmed. It is promising for ultralow voltage rectification on RF energy harvesting.
Keyword (in Japanese) (See Japanese page) 
(in English) RF Energy Harvesting / SOI-FET / Subthreshold Slope / / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 291, SDM2018-76, pp. 59-64, Nov. 2018.
Paper # SDM2018-76 
Date of Issue 2018-11-01 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Download PDF SDM2018-76 Link to ES Tech. Rep. Archives: SDM2018-76

Conference Information
Committee SDM  
Conference Date 2018-11-08 - 2018-11-09 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2018-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characteristics and Ultralow Voltage Rectification Experiment on MOS Diode connection using Super Steep SS PN-Body Tied SOI-FET 
Sub Title (in English)  
Keyword(1) RF Energy Harvesting  
Keyword(2) SOI-FET  
Keyword(3) Subthreshold Slope  
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1st Author's Name Shun Momose  
1st Author's Affiliation Kanazawa Institute of Technology (KIT)
2nd Author's Name Jiro Ida  
2nd Author's Affiliation Kanazawa Institute of Technology (KIT)
3rd Author's Name Takuya Yamada  
3rd Author's Affiliation Kanazawa Institute of Technology (KIT)
4th Author's Name Takayuki Mori  
4th Author's Affiliation Kanazawa Institute of Technology (KIT)
5th Author's Name Kenji Itoh  
5th Author's Affiliation Kanazawa Institute of Technology (KIT)
6th Author's Name Koichiro Ishibashi  
6th Author's Affiliation The University of Electro-Communications (UEC)
7th Author's Name Yasuo Arai  
7th Author's Affiliation High Energy Accelerator Research Organization (KEK)
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Speaker
Date Time 2018-11-09 15:55:00 
Presentation Time 40 
Registration for SDM 
Paper # IEICE-SDM2018-76 
Volume (vol) IEICE-118 
Number (no) no.291 
Page pp.59-64 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2018-11-01 


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