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| Presentation | 2018-11-09 15:55 [Invited Talk] Characteristics and Ultralow Voltage Rectification Experiment on MOS Diode connection using Super Steep SS PN-Body Tied SOI-FET Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK)  SDM2018-76 Link to ES Tech. Rep. Archives: SDM2018-76 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In order to utilize the Radio Frequency (RF) signal power existing in the living environment, a RF rectifier that realizes high power conversion efficiency is necessary. The RF rectifier is required to work in µW or nW class, and it is important to develop a new diode functioning as a rectifying element at ultralow voltage and high frequency. The current-voltage characteristics of conventional p-n junction diodes and Schottky Barrier Diodes rise exponentially. However, it is become tangential line when expanded on an ultralow voltage range. Therefore, it is difficult to rectify an ultralow AC signal. In this paper, we have investigated the static characteristics and ultralow voltage rectification experiment by MOS Diode connection of PN-Body Tied SOI-FET (PNBT) with steep Subthreshold Slope (SS) proposed by us. Sharp-turn-on characteristics appeared at under 0.1 V when PNBT was used, also, half-wave rectified waveform was confirmed even with input amplitude of 10mV. PNBT has a hole charging mechanism and the inherent thyristor structure, operation speed is concerned. However, PNBT operation up to 30 MHz was confirmed. It is promising for ultralow voltage rectification on RF energy harvesting. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | RF Energy Harvesting / SOI-FET / Subthreshold Slope / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 291, SDM2018-76, pp. 59-64, Nov. 2018. | |
| Paper # | SDM2018-76 | |
| Date of Issue | 2018-11-01 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2018-76 Link to ES Tech. Rep. Archives: SDM2018-76 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2018-11-08 - 2018-11-09 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2018-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characteristics and Ultralow Voltage Rectification Experiment on MOS Diode connection using Super Steep SS PN-Body Tied SOI-FET |
| Sub Title (in English) | |
| Keyword(1) | RF Energy Harvesting |
| Keyword(2) | SOI-FET |
| Keyword(3) | Subthreshold Slope |
| Keyword(4) | |
| Keyword(5) | |
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| Keyword(8) | |
| 1st Author's Name | Shun Momose |
| 1st Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 2nd Author's Name | Jiro Ida |
| 2nd Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 3rd Author's Name | Takuya Yamada |
| 3rd Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 4th Author's Name | Takayuki Mori |
| 4th Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 5th Author's Name | Kenji Itoh |
| 5th Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 6th Author's Name | Koichiro Ishibashi |
| 6th Author's Affiliation | The University of Electro-Communications (UEC) |
| 7th Author's Name | Yasuo Arai |
| 7th Author's Affiliation | High Energy Accelerator Research Organization (KEK) |
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| Speaker | Author-1 |
| Date Time | 2018-11-09 15:55:00 |
| Presentation Time | 40 minutes |
| Registration for | SDM |
| Paper # | SDM2018-76 |
| Volume (vol) | vol.118 |
| Number (no) | no.291 |
| Page | pp.59-64 |
| #Pages | 6 |
| Date of Issue | 2018-11-01 (SDM) |
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