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Paper Abstract and Keywords
Presentation 2018-11-09 09:20
[Invited Talk] Topography Simulation of Trench-Filling Growth of 4H-SiC
Kazuhiro Mochizuki, Shiyang Ji, Ryoji Kosugi, Yoshiyuki Yonezawa, Hajime Okumura (AIST) SDM2018-70 Link to ES Tech. Rep. Archives: SDM2018-70
Abstract (in Japanese) (See Japanese page) 
(in English) A topography-simulation model is proposed to simulate chemical-vapor-deposition (CVD) trench filling for 4H-SiC superjunction devices. In contrast to a ballistic transport model used to describe trench-filling growth of Si during low-pressure CVD, a continuum diffusion model is used to describe trench-filling growth of SiC. This is because subatmospheric-pressure CVD is needed to suppress high vapor pressure of Si at high temperature required for 4H polytype. Experimental observations, concerning void and dip formation, are reproduced by including the Gibbs−Thomson effect (i.e., the effect of curvature of a growing surface on equilibrium vapor-phase concentration of growing species) and an orientation dependence of surface free energy.
Keyword (in Japanese) (See Japanese page) 
(in English) Chemical Vapor Deposition / CVD / SiC / Superjunction / Trench-Filling Growth / Topography Simulation / Gibbs−Thomson Effect / Surface Free Energy  
Reference Info. IEICE Tech. Rep., vol. 118, no. 291, SDM2018-70, pp. 29-34, Nov. 2018.
Paper # SDM2018-70 
Date of Issue 2018-11-01 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2018-70 Link to ES Tech. Rep. Archives: SDM2018-70

Conference Information
Committee SDM  
Conference Date 2018-11-08 - 2018-11-09 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2018-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Topography Simulation of Trench-Filling Growth of 4H-SiC 
Sub Title (in English)  
Keyword(1) Chemical Vapor Deposition  
Keyword(2) CVD  
Keyword(3) SiC  
Keyword(4) Superjunction  
Keyword(5) Trench-Filling Growth  
Keyword(6) Topography Simulation  
Keyword(7) Gibbs−Thomson Effect  
Keyword(8) Surface Free Energy  
1st Author's Name Kazuhiro Mochizuki  
1st Author's Affiliation National Institute of Industrial Science and Technology (AIST)
2nd Author's Name Shiyang Ji  
2nd Author's Affiliation National Institute of Industrial Science and Technology (AIST)
3rd Author's Name Ryoji Kosugi  
3rd Author's Affiliation National Institute of Industrial Science and Technology (AIST)
4th Author's Name Yoshiyuki Yonezawa  
4th Author's Affiliation National Institute of Industrial Science and Technology (AIST)
5th Author's Name Hajime Okumura  
5th Author's Affiliation National Institute of Industrial Science and Technology (AIST)
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Speaker
Date Time 2018-11-09 09:20:00 
Presentation Time 60 
Registration for SDM 
Paper # IEICE-SDM2018-70 
Volume (vol) IEICE-118 
Number (no) no.291 
Page pp.29-34 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2018-11-01 


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