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Paper Abstract and Keywords
Presentation 2018-11-09 10:20
[Invited Talk] Modeling of Electron Transport in 4H-SiC MOS Inversion Layers
Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2018-71 Link to ES Tech. Rep. Archives: SDM2018-71
Abstract (in Japanese) (See Japanese page) 
(in English) We formulated scattering mechanisms in 4H-SiC MOS interfaces and calculated the electron mobility by a Monte Carlo simulation. In addition to phonon, ionized impurity, and surface roughness scattering, we considered Coulomb scattering by the charges trapped at interface states and scattering by neutral defects in SiC. By assuming that the trapped charges contribute to screening as well as scattering, the developed model is able to reproduce experimental behaviors of Hall mobility.
Keyword (in Japanese) (See Japanese page) 
(in English) 4H-SiC / MOS / interface states / scattering / mobility / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 291, SDM2018-71, pp. 35-40, Nov. 2018.
Paper # SDM2018-71 
Date of Issue 2018-11-01 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2018-71 Link to ES Tech. Rep. Archives: SDM2018-71

Conference Information
Committee SDM  
Conference Date 2018-11-08 - 2018-11-09 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2018-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Modeling of Electron Transport in 4H-SiC MOS Inversion Layers 
Sub Title (in English)  
Keyword(1) 4H-SiC  
Keyword(2) MOS  
Keyword(3) interface states  
Keyword(4) scattering  
Keyword(5) mobility  
1st Author's Name Hajime Tanaka  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Nobuya Mori  
2nd Author's Affiliation Osaka University (Osaka Univ.)
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Date Time 2018-11-09 10:20:00 
Presentation Time 60 
Registration for SDM 
Paper # IEICE-SDM2018-71 
Volume (vol) IEICE-118 
Number (no) no.291 
Page pp.35-40 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2018-11-01 

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