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Paper Abstract and Keywords
Presentation 2018-11-02 14:25
Thermal stability of silicon and nitrogen doped DLC thin films
Hideki Nakazawa, Kazuki Nakamura, Hiroya Osanai, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.) CPM2018-52
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated the effects of post-annealing on the properties of silicon and nitrogen doped diamond-like carbon (Si-N-DLC) films, which were prepared by plasma-enhanced chemical vapor deposition using H_(2) as a dilution gas and compared the properties of the Si-N-DLC films with those of nitrogen doped DLC (N-DLC) films. We found that the clustering of sp^(2) carbon atoms was accelerated for the N-DLC films by post-annealing in a vacuum at a temperature of 420ºC or above, whereas the sp^(2) C clustering was almost suppressed for the Si-N-DLC films. It was also found that the amount of bound hydrogen in the Si-N-DLC films obviously increased after annealing at temperatures of 420 to 490ºC. The Si-N-DLC films had higher optical bands than the N-DLC films, and the optical band gap of the Si-N-DLC films remained almost unchanged after annealing even at 490ºC.
Keyword (in Japanese) (See Japanese page) 
(in English) Diamond-like carbon / Plasma-enhanced chemical vapor deposition / Silicon / Nitrogen / Post-annealing / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 276, CPM2018-52, pp. 99-104, Nov. 2018.
Paper # CPM2018-52 
Date of Issue 2018-10-25 (CPM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM IEE-MAG  
Conference Date 2018-11-01 - 2018-11-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Machinaka campus Nagaoka 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional materials (semiconductors, magnetic materials, dielectric materials, transparent conductors, semiconductors, etc.) Thin film processes / materials / devices, etc. 
Paper Information
Registration To CPM 
Conference Code 2018-11-CPM-MAG 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Thermal stability of silicon and nitrogen doped DLC thin films 
Sub Title (in English)  
Keyword(1) Diamond-like carbon  
Keyword(2) Plasma-enhanced chemical vapor deposition  
Keyword(3) Silicon  
Keyword(4) Nitrogen  
Keyword(5) Post-annealing  
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1st Author's Name Hideki Nakazawa  
1st Author's Affiliation Hirosaki University (Hirosaki Univ.)
2nd Author's Name Kazuki Nakamura  
2nd Author's Affiliation Hirosaki University (Hirosaki Univ.)
3rd Author's Name Hiroya Osanai  
3rd Author's Affiliation Hirosaki University (Hirosaki Univ.)
4th Author's Name Haruto Koriyama  
4th Author's Affiliation Hirosaki University (Hirosaki Univ.)
5th Author's Name Yasuyuki Kobayashi  
5th Author's Affiliation Hirosaki University (Hirosaki Univ.)
6th Author's Name Yoshiharu Enta  
6th Author's Affiliation Hirosaki University (Hirosaki Univ.)
7th Author's Name Yushi Suzuki  
7th Author's Affiliation Hirosaki University (Hirosaki Univ.)
8th Author's Name Maki Suemitsu  
8th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker
Date Time 2018-11-02 14:25:00 
Presentation Time 25 
Registration for CPM 
Paper # IEICE-CPM2018-52 
Volume (vol) IEICE-118 
Number (no) no.276 
Page pp.99-104 
#Pages IEICE-6 
Date of Issue IEICE-CPM-2018-10-25 


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