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| Presentation | 2018-10-18 10:50 Schottky barrier height reduction of Pd2Si/Si(100) diodes by dopant segregation process Rengie Mark D. Mailig, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech.)  SDM2018-59 Link to ES Tech. Rep. Archives: SDM2018-59 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this paper, the reduction of the Schottky barrier height (SBH) of Pd2Si/Si(100) diodes by the dopant segregation (DS) process was investigated. Furthermore, the effects of the TiN encapsulating layer on the electrical and the physical properties Pd2Si/Si(100) SB diodes were examined. Smooth surface morphology and line edges were obtained for Pd2Si formed with TiN encapsulating layer. Results show that the low SBH to hole (qϕ_Bp) of the Pd2Si/n-Si(100) diodes with DS process was realized at 0.20 eV with ideality factor (n) of 1.11. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Palladium Silicide / Dopant Segregation Process / Schottky Barrier Height / TiN Encapsulating Layer / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 241, SDM2018-59, pp. 35-40, Oct. 2018. | |
| Paper # | SDM2018-59 | |
| Date of Issue | 2018-10-10 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2018-59 Link to ES Tech. Rep. Archives: SDM2018-59 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2018-10-17 - 2018-10-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2018-10-SDM |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Schottky barrier height reduction of Pd2Si/Si(100) diodes by dopant segregation process |
| Sub Title (in English) | |
| Keyword(1) | Palladium Silicide |
| Keyword(2) | Dopant Segregation Process |
| Keyword(3) | Schottky Barrier Height |
| Keyword(4) | TiN Encapsulating Layer |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Rengie Mark D. Mailig |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 2nd Author's Name | Min Gee Kim |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 3rd Author's Name | Shun-ichiro Ohmi |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
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| Speaker | Author-1 |
| Date Time | 2018-10-18 10:50:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2018-59 |
| Volume (vol) | vol.118 |
| Number (no) | no.241 |
| Page | pp.35-40 |
| #Pages | 6 |
| Date of Issue | 2018-10-10 (SDM) |
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