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Paper Abstract and Keywords
Presentation 2018-10-18 14:00
Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain
Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2018-62 Link to ES Tech. Rep. Archives: SDM2018-62
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, a statistical analysis of electric characteristics variabilities such as threshold voltage variability and random telegraph noise (RTN) which become obstacle to high accuracy analog circuit devices was discussed. In the measurement, trapezoidal and octagonal transistors which have asymmetric gate widths at source and drain side were used in addition to conventional rectangular transistors. From the statistical analysis of the asymmetric gate transistors, it is experimentally verified that the electric characteristics variability of the transistors driven in the saturation region are greatly influenced by the source side.
Keyword (in Japanese) (See Japanese page) 
(in English) MOSFET / threshold voltage variability / random telegraph noise / statistical analysis / asymmetric gate structure / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 241, SDM2018-62, pp. 51-56, Oct. 2018.
Paper # SDM2018-62 
Date of Issue 2018-10-10 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2018-62 Link to ES Tech. Rep. Archives: SDM2018-62

Conference Information
Committee SDM  
Conference Date 2018-10-17 - 2018-10-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2018-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain 
Sub Title (in English)  
Keyword(1) MOSFET  
Keyword(2) threshold voltage variability  
Keyword(3) random telegraph noise  
Keyword(4) statistical analysis  
Keyword(5) asymmetric gate structure  
1st Author's Name Shinya Ichino  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Akinobu Teramoto  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Rihito Kuroda  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Takezo Mawaki  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Tomoyuki Suwa  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Shigetoshi Sugawa  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
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Date Time 2018-10-18 14:00:00 
Presentation Time 30 
Registration for SDM 
Paper # IEICE-SDM2018-62 
Volume (vol) IEICE-118 
Number (no) no.241 
Page pp.51-56 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2018-10-10 

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