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| Presentation | 2018-10-18 14:00 Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.)  SDM2018-62 Link to ES Tech. Rep. Archives: SDM2018-62 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this paper, a statistical analysis of electric characteristics variabilities such as threshold voltage variability and random telegraph noise (RTN) which become obstacle to high accuracy analog circuit devices was discussed. In the measurement, trapezoidal and octagonal transistors which have asymmetric gate widths at source and drain side were used in addition to conventional rectangular transistors. From the statistical analysis of the asymmetric gate transistors, it is experimentally verified that the electric characteristics variability of the transistors driven in the saturation region are greatly influenced by the source side. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | MOSFET / threshold voltage variability / random telegraph noise / statistical analysis / asymmetric gate structure / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 241, SDM2018-62, pp. 51-56, Oct. 2018. | |
| Paper # | SDM2018-62 | |
| Date of Issue | 2018-10-10 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2018-62 Link to ES Tech. Rep. Archives: SDM2018-62 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2018-10-17 - 2018-10-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2018-10-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | threshold voltage variability |
| Keyword(3) | random telegraph noise |
| Keyword(4) | statistical analysis |
| Keyword(5) | asymmetric gate structure |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shinya Ichino |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Akinobu Teramoto |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Rihito Kuroda |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Takezo Mawaki |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Tomoyuki Suwa |
| 5th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 6th Author's Name | Shigetoshi Sugawa |
| 6th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2018-10-18 14:00:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2018-62 |
| Volume (vol) | vol.118 |
| Number (no) | no.241 |
| Page | pp.51-56 |
| #Pages | 6 |
| Date of Issue | 2018-10-10 (SDM) |
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