Paper Abstract and Keywords |
Presentation |
2018-10-18 13:00
Improvement of Pentacene/SiO2 Interface Properties by the N-doped LaB6 Interfacial Layer Yasutaka Maeda, Kyung Eun Park, Yuki Komatsu, Shun-ichiro Ohmi (Tokyo Tech) SDM2018-60 Link to ES Tech. Rep. Archives: SDM2018-60 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have reported that the effect of nitrogen-doped LaB6 interfacial layer on the improvement of pentacene-based device characteristics. However, the mechanism of the improvement by nitrogen-doped LaB6 interfacial layer has not been cleared. In this study, precise analysis of pentacene/SiO2 interface property was performed by X-ray photoelectron spectroscopy. It was found that C1s peak of pentacene was chemically shifted toward higher binding energy by introducing nitrogen-doped LaB6 interfacial layer in case the penatcene was deposited at 100oC. It was speculated that the band diagram of pentacene/SiO2 interface at thermal equilibrium state was changed by the nitrogen-doped LaB6 interfacial layer, and it contributed to pentacene-based OFET characteristics. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
pentacene / nitrogen-doped LaB6 / interface control / XPS / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 241, SDM2018-60, pp. 41-45, Oct. 2018. |
Paper # |
SDM2018-60 |
Date of Issue |
2018-10-10 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2018-60 Link to ES Tech. Rep. Archives: SDM2018-60 |
Conference Information |
Committee |
SDM |
Conference Date |
2018-10-17 - 2018-10-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Niche, Tohoku Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process Science and New Process Technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2018-10-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Improvement of Pentacene/SiO2 Interface Properties by the N-doped LaB6 Interfacial Layer |
Sub Title (in English) |
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Keyword(1) |
pentacene |
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nitrogen-doped LaB6 |
Keyword(3) |
interface control |
Keyword(4) |
XPS |
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1st Author's Name |
Yasutaka Maeda |
1st Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech) |
2nd Author's Name |
Kyung Eun Park |
2nd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech) |
3rd Author's Name |
Yuki Komatsu |
3rd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech) |
4th Author's Name |
Shun-ichiro Ohmi |
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Tokyo Institute of Technology (Tokyo Tech) |
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Speaker |
Author-1 |
Date Time |
2018-10-18 13:00:00 |
Presentation Time |
30 minutes |
Registration for |
SDM |
Paper # |
SDM2018-60 |
Volume (vol) |
vol.118 |
Number (no) |
no.241 |
Page |
pp.41-45 |
#Pages |
5 |
Date of Issue |
2018-10-10 (SDM) |