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Paper Abstract and Keywords
Presentation 2018-10-18 16:35
GaN HEMT Darlington Power Amplifier with Individual Bias Adjustment for High-Efficiency and Low-Distortion Characteristics
Atsushi Kitamura, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) EMCJ2018-45 MW2018-81 EST2018-67 Link to ES Tech. Rep. Archives: MW2018-81 EST2018-67
Abstract (in Japanese) (See Japanese page) 
(in English) Multi-transistor configurations are widely applied for improving the performance of transistor amplifiers. In the multi-transistor configuration, it is possible to cancel the nonlinearity of each transistor by adjusting the gate bias, so linearity can be improved. In this research, we have fabricated and evaluated an independent-bias-type GaN HEMT Darlington power amplifier to achieve both low distortion and high efficiency in a wide dynamic range of a power amplifier. By individually adjusting the gate bias voltages in the Darlington amplifier, a third order intermodulation distortion (IMD3) is suppressed. Moreover, by adjusting the drain bias voltages, a power added efficiency (PAE) was improved without affecting to IMD3. The fabricated GaN HEMT Darlington power amplifier exhibited a PAE of 36% and an IMD3 of $-$35,dBc with an output power of 30,dBm at 1.45,GHz. A high quality 64-QAM constellation has been retained for an output power range from 20 to 32,dBm.
Keyword (in Japanese) (See Japanese page) 
(in English) Darlington / GaN HEMT / power amplifier / high efficiency / low distortion / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 248, MW2018-81, pp. 71-75, Oct. 2018.
Paper # MW2018-81 
Date of Issue 2018-10-11 (EMCJ, MW, EST) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Download PDF EMCJ2018-45 MW2018-81 EST2018-67 Link to ES Tech. Rep. Archives: MW2018-81 EST2018-67

Conference Information
Committee EST MW EMCJ IEE-EMC  
Conference Date 2018-10-18 - 2018-10-19 
Place (in Japanese) (See Japanese page) 
Place (in English) Hachinohe Chamber of Commerce and Industry(Hachinohe city, Aomori) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Simulation techniques, EMC, Microwave, Electromagnetic field simulation, etc. 
Paper Information
Registration To MW 
Conference Code 2018-10-EST-MW-EMCJ-EMC 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) GaN HEMT Darlington Power Amplifier with Individual Bias Adjustment for High-Efficiency and Low-Distortion Characteristics 
Sub Title (in English)  
Keyword(1) Darlington  
Keyword(2) GaN HEMT  
Keyword(3) power amplifier  
Keyword(4) high efficiency  
Keyword(5) low distortion  
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1st Author's Name Atsushi Kitamura  
1st Author's Affiliation The University of Electro-Communications (UEC)
2nd Author's Name Yoichiro Takayama  
2nd Author's Affiliation The University of Electro-Communications (UEC)
3rd Author's Name Ryo Ishikawa  
3rd Author's Affiliation The University of Electro-Communications (UEC)
4th Author's Name Kazuhiko Honjo  
4th Author's Affiliation The University of Electro-Communications (UEC)
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Speaker
Date Time 2018-10-18 16:35:00 
Presentation Time 25 
Registration for MW 
Paper # IEICE-EMCJ2018-45,IEICE-MW2018-81,IEICE-EST2018-67 
Volume (vol) IEICE-118 
Number (no) no.247(EMCJ), no.248(MW), no.249(EST) 
Page pp.71-75 
#Pages IEICE-5 
Date of Issue IEICE-EMCJ-2018-10-11,IEICE-MW-2018-10-11,IEICE-EST-2018-10-11 


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