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Paper Abstract and Keywords
Presentation 2018-10-18 13:30
Process Evaluation of Si Nanowire for Thermoelectric Device by Raman Spectroscopy
Ryo Yokogawa (Meiji Univ.), Motohiro Tomita, Takanobu Watanabe (Waseda Univ.), Atsushi Ogura (Meiji Univ.) SDM2018-61 Link to ES Tech. Rep. Archives: SDM2018-61
Abstract (in Japanese) (See Japanese page) 
(in English) Silicon nanowire (SiNW) is expected to be a new attractive thermoelectric material with excellent performance with low thermal conductivity. It has been reported that thermal conductivity is decreased by miniaturization and disorder strain induced at the SiO2/SiNW interface. Therefore, it is important to reveal mechanism of decrease in thermal conductivity at SiO2/SiNW interface experimentally, and SiNW process optimization including thermal oxidation is needed. However, evaluation of thermal conductivity characteristics focused on the SiO2/SiNW interface properties has not been investigated in detail. In this study, we evaluated thermal conductivity properties fabricated by different processes using Raman spectroscopy to optimize thermoelectric Si device process.
Keyword (in Japanese) (See Japanese page) 
(in English) Thermoelectric device / Si nanowire / Raman spectroscopy / / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 241, SDM2018-61, pp. 47-50, Oct. 2018.
Paper # SDM2018-61 
Date of Issue 2018-10-10 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2018-61 Link to ES Tech. Rep. Archives: SDM2018-61

Conference Information
Committee SDM  
Conference Date 2018-10-17 - 2018-10-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2018-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Process Evaluation of Si Nanowire for Thermoelectric Device by Raman Spectroscopy 
Sub Title (in English)  
Keyword(1) Thermoelectric device  
Keyword(2) Si nanowire  
Keyword(3) Raman spectroscopy  
1st Author's Name Ryo Yokogawa  
1st Author's Affiliation Meiji university (Meiji Univ.)
2nd Author's Name Motohiro Tomita  
2nd Author's Affiliation Waseda University (Waseda Univ.)
3rd Author's Name Takanobu Watanabe  
3rd Author's Affiliation Waseda University (Waseda Univ.)
4th Author's Name Atsushi Ogura  
4th Author's Affiliation Meiji university (Meiji Univ.)
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Date Time 2018-10-18 13:30:00 
Presentation Time 30 
Registration for SDM 
Paper # IEICE-SDM2018-61 
Volume (vol) IEICE-118 
Number (no) no.241 
Page pp.47-50 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2018-10-10 

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