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| Presentation | 2018-10-18 13:30 Process Evaluation of Si Nanowire for Thermoelectric Device by Raman Spectroscopy Ryo Yokogawa (Meiji Univ.), Motohiro Tomita, Takanobu Watanabe (Waseda Univ.), Atsushi Ogura (Meiji Univ.)  SDM2018-61 Link to ES Tech. Rep. Archives: SDM2018-61 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Silicon nanowire (SiNW) is expected to be a new attractive thermoelectric material with excellent performance with low thermal conductivity. It has been reported that thermal conductivity is decreased by miniaturization and disorder strain induced at the SiO2/SiNW interface. Therefore, it is important to reveal mechanism of decrease in thermal conductivity at SiO2/SiNW interface experimentally, and SiNW process optimization including thermal oxidation is needed. However, evaluation of thermal conductivity characteristics focused on the SiO2/SiNW interface properties has not been investigated in detail. In this study, we evaluated thermal conductivity properties fabricated by different processes using Raman spectroscopy to optimize thermoelectric Si device process. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Thermoelectric device / Si nanowire / Raman spectroscopy / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 241, SDM2018-61, pp. 47-50, Oct. 2018. | |
| Paper # | SDM2018-61 | |
| Date of Issue | 2018-10-10 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2018-61 Link to ES Tech. Rep. Archives: SDM2018-61 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2018-10-17 - 2018-10-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2018-10-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Process Evaluation of Si Nanowire for Thermoelectric Device by Raman Spectroscopy |
| Sub Title (in English) | |
| Keyword(1) | Thermoelectric device |
| Keyword(2) | Si nanowire |
| Keyword(3) | Raman spectroscopy |
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| 1st Author's Name | Ryo Yokogawa |
| 1st Author's Affiliation | Meiji university (Meiji Univ.) |
| 2nd Author's Name | Motohiro Tomita |
| 2nd Author's Affiliation | Waseda University (Waseda Univ.) |
| 3rd Author's Name | Takanobu Watanabe |
| 3rd Author's Affiliation | Waseda University (Waseda Univ.) |
| 4th Author's Name | Atsushi Ogura |
| 4th Author's Affiliation | Meiji university (Meiji Univ.) |
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| Speaker | Author-1 |
| Date Time | 2018-10-18 13:30:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2018-61 |
| Volume (vol) | vol.118 |
| Number (no) | no.241 |
| Page | pp.47-50 |
| #Pages | 4 |
| Date of Issue | 2018-10-10 (SDM) |
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