Paper Abstract and Keywords |
Presentation |
2018-10-17 16:05
Fabrication process of Hf-based MONOS nonvolatile memory with Si(100) surface flattening process Sohya Kudoh, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-55 Link to ES Tech. Rep. Archives: SDM2018-55 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have reported nonvolatile memory characteristics of Hf-based MONOS diodes were improved by using atomically flat Si(100) surface process. To realize the transistors with Hf-based MONOS gate stack structure, precise etching control of contact hole at source/drain region is necessary. In this report, fabrication process of Hf-based MONOS transistors with surface atomically flattening process was investigated. The depth profile of HfO2/HfN1.0/HfO2 (ONO) structure on atomically flat Si(100) surface was observed by XPS with Ar sputtering. It was found that etching rates of ONO insulator films were decreased by surface atomically flattening process. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Si / atomically flattening process / Ar/H2 / Hf / MONOS type nonvolatile memory / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 241, SDM2018-55, pp. 15-19, Oct. 2018. |
Paper # |
SDM2018-55 |
Date of Issue |
2018-10-10 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2018-55 Link to ES Tech. Rep. Archives: SDM2018-55 |
Conference Information |
Committee |
SDM |
Conference Date |
2018-10-17 - 2018-10-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Niche, Tohoku Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process Science and New Process Technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2018-10-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Fabrication process of Hf-based MONOS nonvolatile memory with Si(100) surface flattening process |
Sub Title (in English) |
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Keyword(1) |
Si |
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atomically flattening process |
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Ar/H2 |
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Hf |
Keyword(5) |
MONOS type nonvolatile memory |
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1st Author's Name |
Sohya Kudoh |
1st Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech.) |
2nd Author's Name |
Yusuke Horiuchi |
2nd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech.) |
3rd Author's Name |
Shun-ichiro Ohmi |
3rd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech.) |
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Speaker |
Author-1 |
Date Time |
2018-10-17 16:05:00 |
Presentation Time |
30 minutes |
Registration for |
SDM |
Paper # |
SDM2018-55 |
Volume (vol) |
vol.118 |
Number (no) |
no.241 |
Page |
pp.15-19 |
#Pages |
5 |
Date of Issue |
2018-10-10 (SDM) |