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| Presentation | 2018-08-10 11:05 Reduction reaction of SiO2 layer on Si substrate by irradiation of electron beam Keisuke Fujimori, Yosuke Chida, Yusuke Masuda, Natsuki Ujiie, Yoshiharu Enta (Hirosaki Univ.)  CPM2018-18 Link to ES Tech. Rep. Archives: CPM2018-18 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Irradiation effects of electron beam on 20-100-nm-thick SiO_{2} layer on Si(100) have been investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). After electron beam irradiation, the sample was dipped in hydrofluoric acid to remove the SiO_{2} layer, and then observed by AFM. The AFM images showed Si dots at irradiation areas, indicating reduction of SiO_{2} layer. Annealing of the sample was also carried out in vacuum after the irradiation. After annealing, small square pits (voids) were observed only at the irradiation areas by SEM. This indicates the SiO_{2} layer is selectively desorbed due to the presence of the reduced Si formed by the irradiation, and consequently the void is formed even at low temperature. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Silicon Dioxide / Reduction Reaction / Electron Beam / Void / Thermal Desorption / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 179, CPM2018-18, pp. 47-52, Aug. 2018. | |
| Paper # | CPM2018-18 | |
| Date of Issue | 2018-08-02 (CPM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | CPM2018-18 Link to ES Tech. Rep. Archives: CPM2018-18 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2018-08-09 - 2018-08-10 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hirosaki Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Component Parts and Materials, etc. |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2018-08-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reduction reaction of SiO2 layer on Si substrate by irradiation of electron beam |
| Sub Title (in English) | |
| Keyword(1) | Silicon Dioxide |
| Keyword(2) | Reduction Reaction |
| Keyword(3) | Electron Beam |
| Keyword(4) | Void |
| Keyword(5) | Thermal Desorption |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Keisuke Fujimori |
| 1st Author's Affiliation | Hirosaki University (Hirosaki Univ.) |
| 2nd Author's Name | Yosuke Chida |
| 2nd Author's Affiliation | Hirosaki University (Hirosaki Univ.) |
| 3rd Author's Name | Yusuke Masuda |
| 3rd Author's Affiliation | Hirosaki University (Hirosaki Univ.) |
| 4th Author's Name | Natsuki Ujiie |
| 4th Author's Affiliation | Hirosaki University (Hirosaki Univ.) |
| 5th Author's Name | Yoshiharu Enta |
| 5th Author's Affiliation | Hirosaki University (Hirosaki Univ.) |
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| Speaker | Author-1 |
| Date Time | 2018-08-10 11:05:00 |
| Presentation Time | 20 minutes |
| Registration for | CPM |
| Paper # | CPM2018-18 |
| Volume (vol) | vol.118 |
| Number (no) | no.179 |
| Page | pp.47-52 |
| #Pages | 6 |
| Date of Issue | 2018-08-02 (CPM) |
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