IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
... (for ESS/CS/ES/ISS)
Tech. Rep. Archives
... (for ES/CS)
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2018-08-10 11:05
Reduction reaction of SiO2 layer on Si substrate by irradiation of electron beam
Keisuke Fujimori, Yosuke Chida, Yusuke Masuda, Natsuki Ujiie, Yoshiharu Enta (Hirosaki Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) Irradiation effects of electron beam on 20-100-nm-thick SiO_{2} layer on Si(100) have been investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM).
After electron beam irradiation, the sample was dipped in hydrofluoric acid to remove the SiO_{2} layer, and then observed by AFM.
The AFM images showed Si dots at irradiation areas, indicating reduction of SiO_{2} layer.
Annealing of the sample was also carried out in vacuum after the irradiation.
After annealing, small square pits (voids) were observed only at the irradiation areas by SEM.
This indicates the SiO_{2} layer is selectively desorbed due to the presence of the reduced Si formed by the irradiation, and consequently the void is formed even at low temperature.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon Dioxide / Reduction Reaction / Electron Beam / Void / Thermal Desorption / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 179, CPM2018-18, pp. 47-52, Aug. 2018.
Paper # CPM2018-18 
Date of Issue 2018-08-02 (CPM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380

Conference Information
Committee CPM  
Conference Date 2018-08-09 - 2018-08-10 
Place (in Japanese) (See Japanese page) 
Place (in English) Hirosaki Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Component Parts and Materials, etc. 
Paper Information
Registration To CPM 
Conference Code 2018-08-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Reduction reaction of SiO2 layer on Si substrate by irradiation of electron beam 
Sub Title (in English)  
Keyword(1) Silicon Dioxide  
Keyword(2) Reduction Reaction  
Keyword(3) Electron Beam  
Keyword(4) Void  
Keyword(5) Thermal Desorption  
1st Author's Name Keisuke Fujimori  
1st Author's Affiliation Hirosaki University (Hirosaki Univ.)
2nd Author's Name Yosuke Chida  
2nd Author's Affiliation Hirosaki University (Hirosaki Univ.)
3rd Author's Name Yusuke Masuda  
3rd Author's Affiliation Hirosaki University (Hirosaki Univ.)
4th Author's Name Natsuki Ujiie  
4th Author's Affiliation Hirosaki University (Hirosaki Univ.)
5th Author's Name Yoshiharu Enta  
5th Author's Affiliation Hirosaki University (Hirosaki Univ.)
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Date Time 2018-08-10 11:05:00 
Presentation Time 20 
Registration for CPM 
Paper # IEICE-CPM2018-18 
Volume (vol) IEICE-118 
Number (no) no.179 
Page pp.47-52 
#Pages IEICE-6 
Date of Issue IEICE-CPM-2018-08-02 

[Return to Top Page]

[Return to IEICE Web Page]

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan