Paper Abstract and Keywords |
Presentation |
2018-08-09 14:50
Growth of graphene on SiC/AlN/Si(110) substrates Hideki Nakazawa, Syunki Narita, Yuki Nara, Yoshiharu Enta (Hirosaki Univ.) CPM2018-9 Link to ES Tech. Rep. Archives: CPM2018-9 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have grown aluminum nitride (AlN) films on 3º off-axis Si(110) substrates by pulsed laser deposition (PLD), and investigated the effects of laser power and substrate temperature on the crystallinity and surface morphology of the AlN films. A fairly flat, high-quality AlN film was grown onto the off-axis Si(110) substrate at a laser power of 100 mJ/pulse and a substrate temperature of 750ºC, which contained no rotation domains. We grew a high-quality 3C-SiC film by PLD on a SiC interfacial buffer layer formed by chemical vapor deposition using monomethylsilane on the AlN film. We examined the structure and chemical bonding of graphene formed by annealing the SiC film at a high temperature in an ultra-high vacuum using in-situ reflection high-energy electron diffraction and X-ray photoelectron spectroscopy. The crystallinity and surface roughness of the graphene were improved compared to those of the previously reported graphene formed on SiC/AlN/Si(110) substrates. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Pulsed laser deposition / Aluminum nitride / Silicon carbide / Graphene / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 179, CPM2018-9, pp. 7-12, Aug. 2018. |
Paper # |
CPM2018-9 |
Date of Issue |
2018-08-02 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
CPM2018-9 Link to ES Tech. Rep. Archives: CPM2018-9 |
Conference Information |
Committee |
CPM |
Conference Date |
2018-08-09 - 2018-08-10 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Hirosaki Univ. |
Topics (in Japanese) |
(See Japanese page) |
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Component Parts and Materials, etc. |
Paper Information |
Registration To |
CPM |
Conference Code |
2018-08-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Growth of graphene on SiC/AlN/Si(110) substrates |
Sub Title (in English) |
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Keyword(1) |
Pulsed laser deposition |
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Aluminum nitride |
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Silicon carbide |
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Graphene |
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1st Author's Name |
Hideki Nakazawa |
1st Author's Affiliation |
Hirosaki University (Hirosaki Univ.) |
2nd Author's Name |
Syunki Narita |
2nd Author's Affiliation |
Hirosaki University (Hirosaki Univ.) |
3rd Author's Name |
Yuki Nara |
3rd Author's Affiliation |
Hirosaki University (Hirosaki Univ.) |
4th Author's Name |
Yoshiharu Enta |
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Hirosaki University (Hirosaki Univ.) |
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Speaker |
Author-1 |
Date Time |
2018-08-09 14:50:00 |
Presentation Time |
20 minutes |
Registration for |
CPM |
Paper # |
CPM2018-9 |
Volume (vol) |
vol.118 |
Number (no) |
no.179 |
Page |
pp.7-12 |
#Pages |
6 |
Date of Issue |
2018-08-02 (CPM) |
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