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Paper Abstract and Keywords
Presentation 2018-08-09 14:50
Growth of graphene on SiC/AlN/Si(110) substrates
Hideki Nakazawa, Syunki Narita, Yuki Nara, Yoshiharu Enta (Hirosaki Univ.) CPM2018-9 Link to ES Tech. Rep. Archives: CPM2018-9
Abstract (in Japanese) (See Japanese page) 
(in English) We have grown aluminum nitride (AlN) films on 3º off-axis Si(110) substrates by pulsed laser deposition (PLD), and investigated the effects of laser power and substrate temperature on the crystallinity and surface morphology of the AlN films. A fairly flat, high-quality AlN film was grown onto the off-axis Si(110) substrate at a laser power of 100 mJ/pulse and a substrate temperature of 750ºC, which contained no rotation domains. We grew a high-quality 3C-SiC film by PLD on a SiC interfacial buffer layer formed by chemical vapor deposition using monomethylsilane on the AlN film. We examined the structure and chemical bonding of graphene formed by annealing the SiC film at a high temperature in an ultra-high vacuum using in-situ reflection high-energy electron diffraction and X-ray photoelectron spectroscopy. The crystallinity and surface roughness of the graphene were improved compared to those of the previously reported graphene formed on SiC/AlN/Si(110) substrates.
Keyword (in Japanese) (See Japanese page) 
(in English) Pulsed laser deposition / Aluminum nitride / Silicon carbide / Graphene / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 179, CPM2018-9, pp. 7-12, Aug. 2018.
Paper # CPM2018-9 
Date of Issue 2018-08-02 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF CPM2018-9 Link to ES Tech. Rep. Archives: CPM2018-9

Conference Information
Committee CPM  
Conference Date 2018-08-09 - 2018-08-10 
Place (in Japanese) (See Japanese page) 
Place (in English) Hirosaki Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Component Parts and Materials, etc. 
Paper Information
Registration To CPM 
Conference Code 2018-08-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth of graphene on SiC/AlN/Si(110) substrates 
Sub Title (in English)  
Keyword(1) Pulsed laser deposition  
Keyword(2) Aluminum nitride  
Keyword(3) Silicon carbide  
Keyword(4) Graphene  
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1st Author's Name Hideki Nakazawa  
1st Author's Affiliation Hirosaki University (Hirosaki Univ.)
2nd Author's Name Syunki Narita  
2nd Author's Affiliation Hirosaki University (Hirosaki Univ.)
3rd Author's Name Yuki Nara  
3rd Author's Affiliation Hirosaki University (Hirosaki Univ.)
4th Author's Name Yoshiharu Enta  
4th Author's Affiliation Hirosaki University (Hirosaki Univ.)
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Speaker Author-1 
Date Time 2018-08-09 14:50:00 
Presentation Time 20 minutes 
Registration for CPM 
Paper # CPM2018-9 
Volume (vol) vol.118 
Number (no) no.179 
Page pp.7-12 
#Pages
Date of Issue 2018-08-02 (CPM) 


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