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| Presentation | 2018-08-07 14:25 Experiment of Ultralow Voltage Rectification by Super Steep SS "PN-Body Tied SOI-FET" Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK)  SDM2018-31 ICD2018-18 Link to ES Tech. Rep. Archives: SDM2018-31 ICD2018-18 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In order to construct a rectifier that function with µW power, it is necessary to develop a new diode technology. The conventional p-n junction diodes and Schottky barrier diodes are dominated by the qV/kBT conduction mechanism the current-voltage characteristics rise exponentially. It is impossible to rectify the AC input with ultralow voltage amplitude. In this study, we focused on “PN-Body Tied SOI-FET” (PNBT) with steep SS proposed in our laboratory and conducted a rectification experiment by setting the input amplitude of the sinewave to 10mV. In the diode by PNBT, perfect half-wave rectification was confirmed even when the input amplitude was 10mV. It is promising for small voltage rectification on RF energy harvesting and sensing. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | / / / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 172, SDM2018-31, pp. 31-34, Aug. 2018. | |
| Paper # | SDM2018-31 | |
| Date of Issue | 2018-07-31 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2018-31 ICD2018-18 Link to ES Tech. Rep. Archives: SDM2018-31 ICD2018-18 |
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| Conference Information | |
| Committee | SDM ICD ITE-IST |
| Conference Date | 2018-08-07 - 2018-08-09 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido Univ., Graduate School of IST M Bldg., M151 |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2018-08-SDM-ICD-IST |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Experiment of Ultralow Voltage Rectification by Super Steep SS "PN-Body Tied SOI-FET" |
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| 1st Author's Name | Shun Momose |
| 1st Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 2nd Author's Name | Jiro Ida |
| 2nd Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 3rd Author's Name | Takuya Yamada |
| 3rd Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 4th Author's Name | Takayuki Mori |
| 4th Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 5th Author's Name | Kenji Itoh |
| 5th Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 6th Author's Name | Koichiro Ishibashi |
| 6th Author's Affiliation | The University of Electro-Communications (UEC) |
| 7th Author's Name | Yasuo Arai |
| 7th Author's Affiliation | High Energy Accelerator Research Organization (KEK) |
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| Speaker | Author-1 |
| Date Time | 2018-08-07 14:25:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2018-31, ICD2018-18 |
| Volume (vol) | vol.118 |
| Number (no) | no.172(SDM), no.173(ICD) |
| Page | pp.31-34 |
| #Pages | 4 |
| Date of Issue | 2018-07-31 (SDM, ICD) |
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