Paper Abstract and Keywords |
Presentation |
2018-07-13 10:00
[Invited Talk]
High performance Si and SiGe based optical modulator and its application to optical integrated circuit Junichi Fujikata, Masataka Noguchi, Shigeki Takahashi, Kazuhiko Kurata (PETRA), Mitsuru Takenaka (Univ. of Tokyo), Takahiro Nakamura (PETRA) LQE2018-30 Link to ES Tech. Rep. Archives: LQE2018-30 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Si optical modulators for MOS (metal-oxide-semiconductor)-junction-type and pn-junction-type with strained p-type SiGe were studied. A Si-photonics optical transmitter using the Si optical modulators was fabricated and error free operation at 25 Gbps over 20-85 degree Celsius was demonstrated. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Si optical modulator / MOS junction / strained SiGe / quantum dot laser / optical I/O core / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 129, LQE2018-30, pp. 39-42, July 2018. |
Paper # |
LQE2018-30 |
Date of Issue |
2018-07-05 (LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
LQE2018-30 Link to ES Tech. Rep. Archives: LQE2018-30 |