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| Presentation | 2018-06-25 15:35 Modification of Al2O3/SiC interface by oxygen radical irradiation Takuma Doi (Nagoya Univ.), Wakana Takeuchi (AIT), Mitsuo Sakashita (Nagoya Univ.), Noriyuki Taoka (AIST), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)  SDM2018-23 Link to ES Tech. Rep. Archives: SDM2018-23 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | To realizing power-saving SiC MOSFET, it is needed to reduce the density of interface traps (Dit) between insulator and SiC. Oxygen radical treatment at room temperature on a deposited-Al2O3 gate insulator on 4H-SiC has been examined in order to improve the interface properties. We achieved the reduction of Dit by 5.6×1011 cm−2eV−1 at around EC−0.4 eV with an oxygen radical treatment more than 1 minute. The Dit near the conduction band edge decreases with increasing oxygen radical treatment time. We have investigated the relationship between Dit and chemical bonding states in detail. Si suboxides are formed between Al2O3 and SiC during Al2O3 deposition, and amount of these suboxides decreases after oxygen radical treatment. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | SiC / $Al_2O_3$ / Interface trap density / Oxygen radical / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 110, SDM2018-23, pp. 33-36, June 2018. | |
| Paper # | SDM2018-23 | |
| Date of Issue | 2018-06-18 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2018-23 Link to ES Tech. Rep. Archives: SDM2018-23 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2018-06-25 - 2018-06-25 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. VBL3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2018-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Modification of Al2O3/SiC interface by oxygen radical irradiation |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | $Al_2O_3$ |
| Keyword(3) | Interface trap density |
| Keyword(4) | Oxygen radical |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takuma Doi |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Wakana Takeuchi |
| 2nd Author's Affiliation | Aichi Institute of Technology (AIT) |
| 3rd Author's Name | Mitsuo Sakashita |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 4th Author's Name | Noriyuki Taoka |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 5th Author's Name | Osamu Nakatsuka |
| 5th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 6th Author's Name | Shigeaki Zaima |
| 6th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2018-06-25 15:35:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2018-23 |
| Volume (vol) | vol.118 |
| Number (no) | no.110 |
| Page | pp.33-36 |
| #Pages | 4 |
| Date of Issue | 2018-06-18 (SDM) |
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