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| Presentation | 2018-05-25 13:25 Comparison of GaInAsP laser diode between hydrophilic bonded InP/Si substrate and InP substrate Hiromu Yada, Kazuki Uchida, Hirokazu Sugiyama, Periyanayagam Gandhi Kallarasan, Xu Han, Masaki Aikawa, Natsuki Hayasaka, Kazuhiko Shimomura (Sophia Univ.)  LQE2018-16 Link to ES Tech. Rep. Archives: LQE2018-16 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have proposed monolithic integration of optical device on hydrophilic bonded InP/Si substrate via MOVPE. We have fabricated 1.5 µm GaInAsP broad and stripe laser diode on InP/Si substrate. In this report, we describe mainly comparison of lasing characteristics between hydrophilic bonded InP/Si substrate and InP substrate. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InP / Si / direct wafer bonding / MOVPE / integration / optical device / semiconductor laser / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 62, LQE2018-16, pp. 25-28, May 2018. | |
| Paper # | LQE2018-16 | |
| Date of Issue | 2018-05-17 (LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | LQE2018-16 Link to ES Tech. Rep. Archives: LQE2018-16 |
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| Conference Information | |
| Committee | LQE LSJ |
| Conference Date | 2018-05-24 - 2018-05-25 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2018-05-LQE-LSJ |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Comparison of GaInAsP laser diode between hydrophilic bonded InP/Si substrate and InP substrate |
| Sub Title (in English) | |
| Keyword(1) | InP |
| Keyword(2) | Si |
| Keyword(3) | direct wafer bonding |
| Keyword(4) | MOVPE |
| Keyword(5) | integration |
| Keyword(6) | optical device |
| Keyword(7) | semiconductor laser |
| Keyword(8) | |
| 1st Author's Name | Hiromu Yada |
| 1st Author's Affiliation | Sophia University (Sophia Univ.) |
| 2nd Author's Name | Kazuki Uchida |
| 2nd Author's Affiliation | Sophia University (Sophia Univ.) |
| 3rd Author's Name | Hirokazu Sugiyama |
| 3rd Author's Affiliation | Sophia University (Sophia Univ.) |
| 4th Author's Name | Periyanayagam Gandhi Kallarasan |
| 4th Author's Affiliation | Sophia University (Sophia Univ.) |
| 5th Author's Name | Xu Han |
| 5th Author's Affiliation | Sophia University (Sophia Univ.) |
| 6th Author's Name | Masaki Aikawa |
| 6th Author's Affiliation | Sophia University (Sophia Univ.) |
| 7th Author's Name | Natsuki Hayasaka |
| 7th Author's Affiliation | Sophia University (Sophia Univ.) |
| 8th Author's Name | Kazuhiko Shimomura |
| 8th Author's Affiliation | Sophia University (Sophia Univ.) |
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| Speaker | Author-1 |
| Date Time | 2018-05-25 13:25:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | LQE2018-16 |
| Volume (vol) | vol.118 |
| Number (no) | no.62 |
| Page | pp.25-28 |
| #Pages | 4 |
| Date of Issue | 2018-05-17 (LQE) |
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