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Paper Abstract and Keywords
Presentation 2018-05-24 14:45
Growth of high quality InSb channel layer with InxGa1-xSb heteroepitaxial films on Si(111)
A. A. Mohammad Monzur-Ul-Akhir, Masayuki Mori, Koichi Maezawa (University of Toyama) ED2018-17 CPM2018-4 SDM2018-12
Abstract (in Japanese) (See Japanese page) 
(in English) InSb has met the requirements of high-performance channel material with faster response towards ultra-fast and very low power devices with its superior properties for CMOS technology. The single crystalline films of InSb and GaSb on the same Si substrate is yet to be reported. Our research group has reported Al2O3/InSb/Si(111) based nMOSFETs, single crystalline GaSb thin film with narrow FWHM on Si(111)?√3x√3-Ga, effective GaSb buffer layer and single crystalline InGaSb film on GaSb/Si(111)?√3x√3-Ga. Here in continuation, we report smooth, single crystalline InSb thin film channel layer with InxGa1-xSb (x=90,85,80 &75%) heteroepitaxial films on Si(111).
Keyword (in Japanese) (See Japanese page) 
(in English) Reflection high-energy electron diffraction (RHEED) / Scanning electron microscopy (SEM) / X-ray scattering, diffraction, and reflection / / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 58, ED2018-17, pp. 15-18, May 2018.
Paper # ED2018-17 
Date of Issue 2018-05-17 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2018-17 CPM2018-4 SDM2018-12

Conference Information
Committee ED CPM SDM  
Conference Date 2018-05-24 - 2018-05-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyohashi Univ. of Tech. (VBL) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal growth, characterization, and devices (compound semiconductors, Si, SiGe, opto-electrical materials), and others 
Paper Information
Registration To ED 
Conference Code 2018-05-ED-CPM-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth of high quality InSb channel layer with InxGa1-xSb heteroepitaxial films on Si(111) 
Sub Title (in English)  
Keyword(1) Reflection high-energy electron diffraction (RHEED)  
Keyword(2) Scanning electron microscopy (SEM)  
Keyword(3) X-ray scattering, diffraction, and reflection  
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1st Author's Name A. A. Mohammad Monzur-Ul-Akhir  
1st Author's Affiliation University of Toyama (University of Toyama)
2nd Author's Name Masayuki Mori  
2nd Author's Affiliation University of Toyama (University of Toyama)
3rd Author's Name Koichi Maezawa  
3rd Author's Affiliation University of Toyama (University of Toyama)
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Speaker
Date Time 2018-05-24 14:45:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2018-17,IEICE-CPM2018-4,IEICE-SDM2018-12 
Volume (vol) IEICE-118 
Number (no) no.58(ED), no.59(CPM), no.60(SDM) 
Page pp.15-18 
#Pages IEICE-4 
Date of Issue IEICE-ED-2018-05-17,IEICE-CPM-2018-05-17,IEICE-SDM-2018-05-17 


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