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Paper Abstract and Keywords
Presentation 2018-05-24 15:25
The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR
Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida (Sciocs) ED2018-18 CPM2018-5 SDM2018-13
Abstract (in Japanese) (See Japanese page) 
(in English) The film thickness of homo epitaxial layers on freestanding GaN substrate was characterized by using Fourier transform infrared spectroscopy (FT-IR). The estimated thickness by FT-IR has good agreement with that of SIMS and cross-sectional cathodoluminescence (CL) intensity mapping image. The spectra of the FT-IR shows the peak around 1650 cm-1, which corresponds to C=N bonding. Thus it indicates that FT-IR has a capability for C impurity detection of 1015 cm-3 orders in GaN film.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / FT-IR / Film thickness measurement / Multi layers / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 58, ED2018-18, pp. 19-22, May 2018.
Paper # ED2018-18 
Date of Issue 2018-05-17 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2018-18 CPM2018-5 SDM2018-13

Conference Information
Committee ED CPM SDM  
Conference Date 2018-05-24 - 2018-05-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyohashi Univ. of Tech. (VBL) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal growth, characterization, and devices (compound semiconductors, Si, SiGe, opto-electrical materials), and others 
Paper Information
Registration To ED 
Conference Code 2018-05-ED-CPM-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) FT-IR  
Keyword(3) Film thickness measurement  
Keyword(4) Multi layers  
1st Author's Name Fumimasa Horikiri  
1st Author's Affiliation Sciocs Co. Ltd. (Sciocs)
2nd Author's Name Yoshinobu Narita  
2nd Author's Affiliation Sciocs Co. Ltd. (Sciocs)
3rd Author's Name Takehiro Yoshida  
3rd Author's Affiliation Sciocs Co. Ltd. (Sciocs)
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Date Time 2018-05-24 15:25:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2018-18,IEICE-CPM2018-5,IEICE-SDM2018-13 
Volume (vol) IEICE-118 
Number (no) no.58(ED), no.59(CPM), no.60(SDM) 
Page pp.19-22 
#Pages IEICE-4 
Date of Issue IEICE-ED-2018-05-17,IEICE-CPM-2018-05-17,IEICE-SDM-2018-05-17 

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