Paper Abstract and Keywords |
Presentation |
2018-05-24 15:25
The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida (Sciocs) ED2018-18 CPM2018-5 SDM2018-13 Link to ES Tech. Rep. Archives: ED2018-18 CPM2018-5 SDM2018-13 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The film thickness of homo epitaxial layers on freestanding GaN substrate was characterized by using Fourier transform infrared spectroscopy (FT-IR). The estimated thickness by FT-IR has good agreement with that of SIMS and cross-sectional cathodoluminescence (CL) intensity mapping image. The spectra of the FT-IR shows the peak around 1650 cm-1, which corresponds to C=N bonding. Thus it indicates that FT-IR has a capability for C impurity detection of 1015 cm-3 orders in GaN film. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / FT-IR / Film thickness measurement / Multi layers / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 58, ED2018-18, pp. 19-22, May 2018. |
Paper # |
ED2018-18 |
Date of Issue |
2018-05-17 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2018-18 CPM2018-5 SDM2018-13 Link to ES Tech. Rep. Archives: ED2018-18 CPM2018-5 SDM2018-13 |
Conference Information |
Committee |
ED CPM SDM |
Conference Date |
2018-05-24 - 2018-05-24 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Toyohashi Univ. of Tech. (VBL) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Crystal growth, characterization, and devices (compound semiconductors, Si, SiGe, opto-electrical materials), and others |
Paper Information |
Registration To |
ED |
Conference Code |
2018-05-ED-CPM-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR |
Sub Title (in English) |
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Keyword(1) |
GaN |
Keyword(2) |
FT-IR |
Keyword(3) |
Film thickness measurement |
Keyword(4) |
Multi layers |
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1st Author's Name |
Fumimasa Horikiri |
1st Author's Affiliation |
Sciocs Co. Ltd. (Sciocs) |
2nd Author's Name |
Yoshinobu Narita |
2nd Author's Affiliation |
Sciocs Co. Ltd. (Sciocs) |
3rd Author's Name |
Takehiro Yoshida |
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Sciocs Co. Ltd. (Sciocs) |
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Speaker |
Author-1 |
Date Time |
2018-05-24 15:25:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2018-18, CPM2018-5, SDM2018-13 |
Volume (vol) |
vol.118 |
Number (no) |
no.58(ED), no.59(CPM), no.60(SDM) |
Page |
pp.19-22 |
#Pages |
4 |
Date of Issue |
2018-05-17 (ED, CPM, SDM) |
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