IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
... (for ESS/CS/ES/ISS)
Tech. Rep. Archives
... (for ES/CS)
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2018-05-24 15:25
The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR
Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida (Sciocs) ED2018-18 CPM2018-5 SDM2018-13
Abstract (in Japanese) (See Japanese page) 
(in English) The film thickness of homo epitaxial layers on freestanding GaN substrate was characterized by using Fourier transform infrared spectroscopy (FT-IR). The estimated thickness by FT-IR has good agreement with that of SIMS and cross-sectional cathodoluminescence (CL) intensity mapping image. The spectra of the FT-IR shows the peak around 1650 cm-1, which corresponds to C=N bonding. Thus it indicates that FT-IR has a capability for C impurity detection of 1015 cm-3 orders in GaN film.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / FT-IR / Film thickness measurement / Multi layers / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 58, ED2018-18, pp. 19-22, May 2018.
Paper # ED2018-18 
Date of Issue 2018-05-17 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2018-18 CPM2018-5 SDM2018-13

Conference Information
Committee ED CPM SDM  
Conference Date 2018-05-24 - 2018-05-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyohashi Univ. of Tech. (VBL) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal growth, characterization, and devices (compound semiconductors, Si, SiGe, opto-electrical materials), and others 
Paper Information
Registration To ED 
Conference Code 2018-05-ED-CPM-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) FT-IR  
Keyword(3) Film thickness measurement  
Keyword(4) Multi layers  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Fumimasa Horikiri  
1st Author's Affiliation Sciocs Co. Ltd. (Sciocs)
2nd Author's Name Yoshinobu Narita  
2nd Author's Affiliation Sciocs Co. Ltd. (Sciocs)
3rd Author's Name Takehiro Yoshida  
3rd Author's Affiliation Sciocs Co. Ltd. (Sciocs)
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker
Date Time 2018-05-24 15:25:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2018-18,IEICE-CPM2018-5,IEICE-SDM2018-13 
Volume (vol) IEICE-118 
Number (no) no.58(ED), no.59(CPM), no.60(SDM) 
Page pp.19-22 
#Pages IEICE-4 
Date of Issue IEICE-ED-2018-05-17,IEICE-CPM-2018-05-17,IEICE-SDM-2018-05-17 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan