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Paper Abstract and Keywords
Presentation 2018-05-24 15:50
Temperature dependence of hydrogen-related donor in FZ-Silicon
Akira Kiyoi, Katsumi Nakamura (Mitsubishi Electric Corp.) ED2018-19 CPM2018-6 SDM2018-14 Link to ES Tech. Rep. Archives: ED2018-19 CPM2018-6 SDM2018-14
Abstract (in Japanese) (See Japanese page) 
(in English) Temperature dependence of Hydrogen-related Donor (HD) and silicon self-interstitials has been investigated in order to clarify the generation mechanism of HD. n-type FZ-silicon wafer implanted with hydrogen and annealed up to 575℃, was measured with spreading resistance profiling and photoluminescence. The area where HD exist have appeared at the temperature from 275 ℃ to 575 ℃ and expanded according to increasing the annealing temperature. The annealing temperature dependence of HD concentration have indicated that three type of HD which have each maximum concentration at the temperature of 350℃, 450℃, 525℃ respectively. From the PL measurement, Luminescence lines originated from silicon self-interstitials (W-line and X-line) has been observed prominently. Luminescence line having the ionization energy around several 10 meV has been also observed at the temperature from 375℃ to 550℃. The intensities of W-line, X-line has reached their maximum at the temperature of 350℃, 450℃ respectively. We have speculated that the similarity of annealing temperature dependence between HD and silicon self-interstitials indicated silicon self-interstitial was the core defect of HD.
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Reference Info. IEICE Tech. Rep., vol. 118, no. 60, SDM2018-14, pp. 23-28, May 2018.
Paper # SDM2018-14 
Date of Issue 2018-05-17 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2018-19 CPM2018-6 SDM2018-14 Link to ES Tech. Rep. Archives: ED2018-19 CPM2018-6 SDM2018-14

Conference Information
Committee ED CPM SDM  
Conference Date 2018-05-24 - 2018-05-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyohashi Univ. of Tech. (VBL) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal growth, characterization, and devices (compound semiconductors, Si, SiGe, opto-electrical materials), and others 
Paper Information
Registration To SDM 
Conference Code 2018-05-ED-CPM-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Temperature dependence of hydrogen-related donor in FZ-Silicon 
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1st Author's Name Akira Kiyoi  
1st Author's Affiliation Mitsubishi Electric Corporation, Advanced Technology R&D center (Mitsubishi Electric Corp.)
2nd Author's Name Katsumi Nakamura  
2nd Author's Affiliation Mitsubishi Electric Corporation, Power Device Works (Mitsubishi Electric Corp.)
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Date Time 2018-05-24 15:50:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2018-19, CPM2018-6, SDM2018-14 
Volume (vol) vol.118 
Number (no) no.58(ED), no.59(CPM), no.60(SDM) 
Page pp.23-28 
#Pages
Date of Issue 2018-05-17 (ED, CPM, SDM) 


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