Paper Abstract and Keywords |
Presentation |
2018-05-24 15:50
Temperature dependence of hydrogen-related donor in FZ-Silicon Akira Kiyoi, Katsumi Nakamura (Mitsubishi Electric Corp.) ED2018-19 CPM2018-6 SDM2018-14 Link to ES Tech. Rep. Archives: ED2018-19 CPM2018-6 SDM2018-14 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Temperature dependence of Hydrogen-related Donor (HD) and silicon self-interstitials has been investigated in order to clarify the generation mechanism of HD. n-type FZ-silicon wafer implanted with hydrogen and annealed up to 575℃, was measured with spreading resistance profiling and photoluminescence. The area where HD exist have appeared at the temperature from 275 ℃ to 575 ℃ and expanded according to increasing the annealing temperature. The annealing temperature dependence of HD concentration have indicated that three type of HD which have each maximum concentration at the temperature of 350℃, 450℃, 525℃ respectively. From the PL measurement, Luminescence lines originated from silicon self-interstitials (W-line and X-line) has been observed prominently. Luminescence line having the ionization energy around several 10 meV has been also observed at the temperature from 375℃ to 550℃. The intensities of W-line, X-line has reached their maximum at the temperature of 350℃, 450℃ respectively. We have speculated that the similarity of annealing temperature dependence between HD and silicon self-interstitials indicated silicon self-interstitial was the core defect of HD. |
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Reference Info. |
IEICE Tech. Rep., vol. 118, no. 60, SDM2018-14, pp. 23-28, May 2018. |
Paper # |
SDM2018-14 |
Date of Issue |
2018-05-17 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2018-19 CPM2018-6 SDM2018-14 Link to ES Tech. Rep. Archives: ED2018-19 CPM2018-6 SDM2018-14 |
Conference Information |
Committee |
ED CPM SDM |
Conference Date |
2018-05-24 - 2018-05-24 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Toyohashi Univ. of Tech. (VBL) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Crystal growth, characterization, and devices (compound semiconductors, Si, SiGe, opto-electrical materials), and others |
Paper Information |
Registration To |
SDM |
Conference Code |
2018-05-ED-CPM-SDM |
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Japanese |
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(See Japanese page) |
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Title (in English) |
Temperature dependence of hydrogen-related donor in FZ-Silicon |
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1st Author's Name |
Akira Kiyoi |
1st Author's Affiliation |
Mitsubishi Electric Corporation, Advanced Technology R&D center (Mitsubishi Electric Corp.) |
2nd Author's Name |
Katsumi Nakamura |
2nd Author's Affiliation |
Mitsubishi Electric Corporation, Power Device Works (Mitsubishi Electric Corp.) |
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Speaker |
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Date Time |
2018-05-24 15:50:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
ED2018-19, CPM2018-6, SDM2018-14 |
Volume (vol) |
vol.118 |
Number (no) |
no.58(ED), no.59(CPM), no.60(SDM) |
Page |
pp.23-28 |
#Pages |
6 |
Date of Issue |
2018-05-17 (ED, CPM, SDM) |
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