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| Presentation | 2018-05-24 16:15 Reduction of threading dislocation density in Ge layers on Si by introducing tunnel-shaped voids Motoki Yako (Univ. of Tokyo), Yasuhiko Ishikawa (Toyohashi Univ. of Tech.), Kazumi Wada (Massachusetts Inst. Tech.)  ED2018-20 CPM2018-7 SDM2018-15 Link to ES Tech. Rep. Archives: ED2018-20 CPM2018-7 SDM2018-15 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | (Not available yet) | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | / / / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 60, SDM2018-15, pp. 29-32, May 2018. | |
| Paper # | SDM2018-15 | |
| Date of Issue | 2018-05-17 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2018-20 CPM2018-7 SDM2018-15 Link to ES Tech. Rep. Archives: ED2018-20 CPM2018-7 SDM2018-15 |
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| Conference Information | |
| Committee | ED CPM SDM |
| Conference Date | 2018-05-24 - 2018-05-24 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Toyohashi Univ. of Tech. (VBL) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Crystal growth, characterization, and devices (compound semiconductors, Si, SiGe, opto-electrical materials), and others |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2018-05-ED-CPM-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reduction of threading dislocation density in Ge layers on Si by introducing tunnel-shaped voids |
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| 1st Author's Name | Motoki Yako |
| 1st Author's Affiliation | The University of Tokyo (Univ. of Tokyo) |
| 2nd Author's Name | Yasuhiko Ishikawa |
| 2nd Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ. of Tech.) |
| 3rd Author's Name | Kazumi Wada |
| 3rd Author's Affiliation | Massachusetts Institute of Technology (Massachusetts Inst. Tech.) |
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| Speaker | Author-1 |
| Date Time | 2018-05-24 16:15:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | ED2018-20, CPM2018-7, SDM2018-15 |
| Volume (vol) | vol.118 |
| Number (no) | no.58(ED), no.59(CPM), no.60(SDM) |
| Page | pp.29-32 |
| #Pages | 4 |
| Date of Issue | 2018-05-17 (ED, CPM, SDM) |
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