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Paper Abstract and Keywords
Presentation 2018-04-27 14:50
S-band Tx Module with Cu Pillar Interconnection Si/GaN 3D Chip Embedding Substrate
Kengo Kawasaki, Eigo Kuwata, Hidenori Ishibashi, Tomohiro Yao, Kiyoshi Ishida, Kazuhiro Maeda, Hironobu Shibata, Masaomi Tsuru, Kazutomi Mori, Mitsuhiro Shimozawa, Hiroshi Fukumoto (Mitsubishi Electric Corp.) WPT2018-5 MW2018-5 Link to ES Tech. Rep. Archives: MW2018-5
Abstract (in Japanese) (See Japanese page) 
(in English) A SiGe chip and GaN chip packaged Tx module in S-band is represented. SiGe and GaN with Redistribution Layer (RDL) are integrated in 3D package. A chip embedding substrate is adopted and the GaN chip consisting of a power amplifier is embedded in the substrate. SiGe chip consisting a phase shifter and a variable gain amplifier is flip-chip bonded on the GaN chip embedded substrate. The package area of the Tx module is 7mm by 7mm. The measured RMS phase error rate of 1.3 degree and RMS amplitude error rate of 0.31dB are obtained in S-band, respectively. The maximum output power of 32dBm is achieved in S-band.
Keyword (in Japanese) (See Japanese page) 
(in English) Package / Cu Pillar / Chip embedding substrate / MMIC / SiGe HBT / GaN HEMT / Tx module /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 18, MW2018-5, pp. 19-23, April 2018.
Paper # MW2018-5 
Date of Issue 2018-04-20 (WPT, MW) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Download PDF WPT2018-5 MW2018-5 Link to ES Tech. Rep. Archives: MW2018-5

Conference Information
Committee MW WPT  
Conference Date 2018-04-27 - 2018-04-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Building 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Wireless Power Transfer / microwave, general 
Paper Information
Registration To MW 
Conference Code 2018-04-MW-WPT 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) S-band Tx Module with Cu Pillar Interconnection Si/GaN 3D Chip Embedding Substrate 
Sub Title (in English)  
Keyword(1) Package  
Keyword(2) Cu Pillar  
Keyword(3) Chip embedding substrate  
Keyword(4) MMIC  
Keyword(5) SiGe HBT  
Keyword(6) GaN HEMT  
Keyword(7) Tx module  
Keyword(8)  
1st Author's Name Kengo Kawasaki  
1st Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Corp.)
2nd Author's Name Eigo Kuwata  
2nd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Corp.)
3rd Author's Name Hidenori Ishibashi  
3rd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Corp.)
4th Author's Name Tomohiro Yao  
4th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Corp.)
5th Author's Name Kiyoshi Ishida  
5th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Corp.)
6th Author's Name Kazuhiro Maeda  
6th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Corp.)
7th Author's Name Hironobu Shibata  
7th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Corp.)
8th Author's Name Masaomi Tsuru  
8th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Corp.)
9th Author's Name Kazutomi Mori  
9th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Corp.)
10th Author's Name Mitsuhiro Shimozawa  
10th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Corp.)
11th Author's Name Hiroshi Fukumoto  
11th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Corp.)
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Speaker
Date Time 2018-04-27 14:50:00 
Presentation Time 25 
Registration for MW 
Paper # IEICE-WPT2018-5,IEICE-MW2018-5 
Volume (vol) IEICE-118 
Number (no) no.17(WPT), no.18(MW) 
Page pp.19-23 
#Pages IEICE-5 
Date of Issue IEICE-WPT-2018-04-20,IEICE-MW-2018-04-20 


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