Paper Abstract and Keywords |
Presentation |
2018-04-13 15:00
Discrimination of size and position of nanostructures embedded in MOSFET through drain current Katsumi Shimizu (Hokkaido Univ.), Ueba Yosuke, Mitsuru Kitamura, Ohyagi Yasuyuki (DNP), Morihisa Hoga (Compass Two-One), Tate Naoya (Kyushu Univ.), Makoto Naruse (NICT), Tsutomu Matsumoto (Yokohama Natl. Univ.), Seiya Kasai (Hokkaido Univ.) HWS2018-7 |
Abstract |
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(in English) |
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Keyword |
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(in English) |
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Reference Info. |
IEICE Tech. Rep., vol. 118, no. 3, HWS2018-7, pp. 35-39, April 2018. |
Paper # |
HWS2018-7 |
Date of Issue |
2018-04-06 (HWS) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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HWS2018-7 |
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