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Paper Abstract and Keywords
Presentation 2018-04-07 11:20
[Invited Talk] High Performance and Functional Group-Ⅳ Thin-Film Transistors
Akito Hara, Hiroki Utsumi, Naoki Nishiguchi, Ryo Miyazaki (Tohoku Gakuin Univ.) SDM2018-5 OME2018-5 Link to ES Tech. Rep. Archives: SDM2018-5 OME2018-5
Abstract (in Japanese) (See Japanese page) 
(in English) We have fabricated self-aligned planar double-gate (DG) or self-aligned planar four-terminal (4T) polycrystalline germanium (poly-Ge) and polycrystalline germanium-tin (poly-Ge1-xSnx) thin-film transistors (TFTs) via copper metal-induced crystallization (Cu-MIC). Furthermore, we have fabricated top-gate poly-Ge TFTs via Cu-MIC on spin-coated plastic films. In these TFTs, the parasitic resistance of the source drains (SD) was reduced via aluminum-induced lateral metallization of the SD. In this article, we report the performance of these TFTs. In addition, we briefly comment on the performance of 4T polycrystalline silicon TFTs and complementary metal-oxide-semiconductor inverters.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge / Ge1-xSnx / Si / TFT / Plastic / Flexible / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 1, SDM2018-5, pp. 19-24, April 2018.
Paper # SDM2018-5 
Date of Issue 2018-03-30 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2018-5 OME2018-5 Link to ES Tech. Rep. Archives: SDM2018-5 OME2018-5

Conference Information
Committee SDM OME  
Conference Date 2018-04-06 - 2018-04-07 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawaken Seinen Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc. 
Paper Information
Registration To SDM 
Conference Code 2018-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High Performance and Functional Group-Ⅳ Thin-Film Transistors 
Sub Title (in English)  
Keyword(1) Ge  
Keyword(2) Ge1-xSnx  
Keyword(3) Si  
Keyword(4) TFT  
Keyword(5) Plastic  
Keyword(6) Flexible  
Keyword(7)  
Keyword(8)  
1st Author's Name Akito Hara  
1st Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
2nd Author's Name Hiroki Utsumi  
2nd Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
3rd Author's Name Naoki Nishiguchi  
3rd Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
4th Author's Name Ryo Miyazaki  
4th Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
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Speaker
Date Time 2018-04-07 11:20:00 
Presentation Time 40 
Registration for SDM 
Paper # IEICE-SDM2018-5,IEICE-OME2018-5 
Volume (vol) IEICE-118 
Number (no) no.1(SDM), no.2(OME) 
Page pp.19-24 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2018-03-30,IEICE-OME-2018-03-30 


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