Paper Abstract and Keywords |
Presentation |
2018-01-30 15:30
[Invited Talk]
Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo) SDM2017-96 Link to ES Tech. Rep. Archives: SDM2017-96 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
5-nm-thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indicates that stable ferroelectric characteristics are maintained down to 5-nm-thick by taking care of doping and capping effects. Furthermore, the cycling performance shows no wake-up behavior, no obvious degradation after 10^8 cycles. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Ferroelectric HfO2 / thickness dependence / field cycling reliability / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 427, SDM2017-96, pp. 21-24, Jan. 2018. |
Paper # |
SDM2017-96 |
Date of Issue |
2018-01-23 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2017-96 Link to ES Tech. Rep. Archives: SDM2017-96 |