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Paper Abstract and Keywords
Presentation 2018-01-30 15:30
[Invited Talk] Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties
Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo) SDM2017-96 Link to ES Tech. Rep. Archives: SDM2017-96
Abstract (in Japanese) (See Japanese page) 
(in English) 5-nm-thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indicates that stable ferroelectric characteristics are maintained down to 5-nm-thick by taking care of doping and capping effects. Furthermore, the cycling performance shows no wake-up behavior, no obvious degradation after 10^8 cycles.
Keyword (in Japanese) (See Japanese page) 
(in English) Ferroelectric HfO2 / thickness dependence / field cycling reliability / / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 427, SDM2017-96, pp. 21-24, Jan. 2018.
Paper # SDM2017-96 
Date of Issue 2018-01-23 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2017-96 Link to ES Tech. Rep. Archives: SDM2017-96

Conference Information
Committee SDM  
Conference Date 2018-01-30 - 2018-01-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2018-01-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties 
Sub Title (in English)  
Keyword(1) Ferroelectric HfO2  
Keyword(2) thickness dependence  
Keyword(3) field cycling reliability  
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1st Author's Name Xuan Tian  
1st Author's Affiliation University of Tokyo (Univ. of Tokyo)
2nd Author's Name Lun Xu  
2nd Author's Affiliation University of Tokyo (Univ. of Tokyo)
3rd Author's Name Shigehisa Shibayama  
3rd Author's Affiliation University of Tokyo (Univ. of Tokyo)
4th Author's Name Tomonori Nishimura  
4th Author's Affiliation University of Tokyo (Univ. of Tokyo)
5th Author's Name Takeaki Yajima  
5th Author's Affiliation University of Tokyo (Univ. of Tokyo)
6th Author's Name Shinji Migita  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
7th Author's Name Akira Toriumi  
7th Author's Affiliation University of Tokyo (Univ. of Tokyo)
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Speaker
Date Time 2018-01-30 15:30:00 
Presentation Time 30 
Registration for SDM 
Paper # IEICE-SDM2017-96 
Volume (vol) IEICE-117 
Number (no) no.427 
Page pp.21-24 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2018-01-23 


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