IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
... (for ESS/CS/ES/ISS)
Tech. Rep. Archives
... (for ES/CS)
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2018-01-26 09:55
UHF-C Band Broadband Power Amplifier with Series Connected SiGe HBT and GaN HEMT
Eigo Kuwata, Kengo Kawasaki, Daisuke Tsunami, Kazuhiro Maeda, Koji Yamanaka (MELCO)   エレソ技報アーカイブはこちら
Abstract (in Japanese) (See Japanese page) 
(in English) This paper reports on a multi chips amplifier consists of Gallium Nitride High Electron Mobility Transistor (GaN HEMT) and Si RFIC high power amplifier (HPA), which features series connected SiGe HBT and GaN HEMT. SiGe HBT of the amplifier drive GaN HEMT without interstage matching network, hence series connected SiGe HBT and GaN HEMT configuration promise small amplifier size. The fabricated Si chip dimensions are 1.3mm by 1.3 mm and GaN chip dimensions are 1mm by 1 mm. Measured small signal gain exceeds 20 dB and the output power reaches 34 - 36.2 dBm with PAE of 23.5 - 57% from 0.5 GHz to 4.5 GHz at 25 V power supply voltage.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / SiGe / HBT / HEMT / MMIC / 増幅器 / 広帯域 /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 413, MW2017-167, pp. 25-29, Jan. 2018.
Paper # MW2017-167 
Date of Issue 2018-01-18 (ED, MW) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380

Conference Information
Committee ED MW  
Conference Date 2018-01-25 - 2018-01-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound semiconductor, High speed and High frequency devices/Microwave technologies 
Paper Information
Registration To MW 
Conference Code 2018-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) UHF-C Band Broadband Power Amplifier with Series Connected SiGe HBT and GaN HEMT 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) SiGe  
Keyword(3) HBT  
Keyword(4) HEMT  
Keyword(5) MMIC  
Keyword(6) 増幅器  
Keyword(7) 広帯域  
1st Author's Name Eigo Kuwata  
1st Author's Affiliation Mitsubishi Electric Corporation (MELCO)
2nd Author's Name Kengo Kawasaki  
2nd Author's Affiliation Mitsubishi Electric Corporation (MELCO)
3rd Author's Name Daisuke Tsunami  
3rd Author's Affiliation Mitsubishi Electric Corporation (MELCO)
4th Author's Name Kazuhiro Maeda  
4th Author's Affiliation Mitsubishi Electric Corporation (MELCO)
5th Author's Name Koji Yamanaka  
5th Author's Affiliation Mitsubishi Electric Corporation (MELCO)
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Date Time 2018-01-26 09:55:00 
Presentation Time 25 
Registration for MW 
Paper # IEICE-ED2017-98,IEICE-MW2017-167 
Volume (vol) IEICE-117 
Number (no) no.412(ED), no.413(MW) 
Page pp.25-29 
#Pages IEICE-5 
Date of Issue IEICE-ED-2018-01-18,IEICE-MW-2018-01-18 

[Return to Top Page]

[Return to IEICE Web Page]

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan