Paper Abstract and Keywords |
Presentation |
2018-01-26 09:55
UHF-C Band Broadband Power Amplifier with Series Connected SiGe HBT and GaN HEMT Eigo Kuwata, Kengo Kawasaki, Daisuke Tsunami, Kazuhiro Maeda, Koji Yamanaka (MELCO) ED2017-98 MW2017-167 Link to ES Tech. Rep. Archives: ED2017-98 MW2017-167 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
This paper reports on a multi chips amplifier consists of Gallium Nitride High Electron Mobility Transistor (GaN HEMT) and Si RFIC high power amplifier (HPA), which features series connected SiGe HBT and GaN HEMT. SiGe HBT of the amplifier drive GaN HEMT without interstage matching network, hence series connected SiGe HBT and GaN HEMT configuration promise small amplifier size. The fabricated Si chip dimensions are 1.3mm by 1.3 mm and GaN chip dimensions are 1mm by 1 mm. Measured small signal gain exceeds 20 dB and the output power reaches 34 - 36.2 dBm with PAE of 23.5 - 57% from 0.5 GHz to 4.5 GHz at 25 V power supply voltage. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / SiGe / HBT / HEMT / MMIC / 増幅器 / 広帯域 / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 413, MW2017-167, pp. 25-29, Jan. 2018. |
Paper # |
MW2017-167 |
Date of Issue |
2018-01-18 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2017-98 MW2017-167 Link to ES Tech. Rep. Archives: ED2017-98 MW2017-167 |
Conference Information |
Committee |
ED MW |
Conference Date |
2018-01-25 - 2018-01-26 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Compound semiconductor, High speed and High frequency devices/Microwave technologies |
Paper Information |
Registration To |
MW |
Conference Code |
2018-01-ED-MW |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
UHF-C Band Broadband Power Amplifier with Series Connected SiGe HBT and GaN HEMT |
Sub Title (in English) |
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Keyword(1) |
GaN |
Keyword(2) |
SiGe |
Keyword(3) |
HBT |
Keyword(4) |
HEMT |
Keyword(5) |
MMIC |
Keyword(6) |
増幅器 |
Keyword(7) |
広帯域 |
Keyword(8) |
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1st Author's Name |
Eigo Kuwata |
1st Author's Affiliation |
Mitsubishi Electric Corporation (MELCO) |
2nd Author's Name |
Kengo Kawasaki |
2nd Author's Affiliation |
Mitsubishi Electric Corporation (MELCO) |
3rd Author's Name |
Daisuke Tsunami |
3rd Author's Affiliation |
Mitsubishi Electric Corporation (MELCO) |
4th Author's Name |
Kazuhiro Maeda |
4th Author's Affiliation |
Mitsubishi Electric Corporation (MELCO) |
5th Author's Name |
Koji Yamanaka |
5th Author's Affiliation |
Mitsubishi Electric Corporation (MELCO) |
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Speaker |
Author-1 |
Date Time |
2018-01-26 09:55:00 |
Presentation Time |
25 minutes |
Registration for |
MW |
Paper # |
ED2017-98, MW2017-167 |
Volume (vol) |
vol.117 |
Number (no) |
no.412(ED), no.413(MW) |
Page |
pp.25-29 |
#Pages |
5 |
Date of Issue |
2018-01-18 (ED, MW) |
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