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Paper Abstract and Keywords
Presentation 2018-01-26 09:30
High RF-Input-Sensitivity Diode Rectifier with Series Inductor
Katsuyuki Tanaka, Shinichi Tanaka (Shibaura Inst. of Tech.) ED2017-97 MW2017-166 Link to ES Tech. Rep. Archives: ED2017-97 MW2017-166
Abstract (in Japanese) (See Japanese page) 
(in English) A new method of improving RF input sensitivity of single shunt diode rectifier by connecting a series inductor to the diode was studied. As a result of the increased time variation rate of the current due to the resonance between the inductor and the diode capacitance, a large electromotive force (emf) is produced driving the diode to the ON-state. Moreover, because of the anti-phase behavior of the emf and the current, the reflection is significantly suppressed regardless of the diode state. This is in contrast with the conventional rectifier, in which the diode will never be turned on, and thus neither rectification nor reflection suppressing mechanism start up, unless sufficient RF input signal is fed to the rectifier. Detailed analysis has shown that the package parasitic capacitance (Cp) of the diode is the key to leverage the full potential of the proposed rectifying mechanism. The fabricated rectifier designed considering the Cp effect demonstrated 21-dB improvement of RF input sensitivity.
Keyword (in Japanese) (See Japanese page) 
(in English) Microwave rectifier / Diode / RF-DC Conversion Efficiency / Inductor / Resonance / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 413, MW2017-166, pp. 19-24, Jan. 2018.
Paper # MW2017-166 
Date of Issue 2018-01-18 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2017-97 MW2017-166 Link to ES Tech. Rep. Archives: ED2017-97 MW2017-166

Conference Information
Committee ED MW  
Conference Date 2018-01-25 - 2018-01-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound semiconductor, High speed and High frequency devices/Microwave technologies 
Paper Information
Registration To MW 
Conference Code 2018-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High RF-Input-Sensitivity Diode Rectifier with Series Inductor 
Sub Title (in English)  
Keyword(1) Microwave rectifier  
Keyword(2) Diode  
Keyword(3) RF-DC Conversion Efficiency  
Keyword(4) Inductor  
Keyword(5) Resonance  
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Keyword(8)  
1st Author's Name Katsuyuki Tanaka  
1st Author's Affiliation Shibaura Institute of Technology (Shibaura Inst. of Tech.)
2nd Author's Name Shinichi Tanaka  
2nd Author's Affiliation Shibaura Institute of Technology (Shibaura Inst. of Tech.)
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Speaker Author-1 
Date Time 2018-01-26 09:30:00 
Presentation Time 25 minutes 
Registration for MW 
Paper # ED2017-97, MW2017-166 
Volume (vol) vol.117 
Number (no) no.412(ED), no.413(MW) 
Page pp.19-24 
#Pages
Date of Issue 2018-01-18 (ED, MW) 


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