Paper Abstract and Keywords |
Presentation |
2018-01-26 09:30
High RF-Input-Sensitivity Diode Rectifier with Series Inductor Katsuyuki Tanaka, Shinichi Tanaka (Shibaura Inst. of Tech.) ED2017-97 MW2017-166 Link to ES Tech. Rep. Archives: ED2017-97 MW2017-166 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A new method of improving RF input sensitivity of single shunt diode rectifier by connecting a series inductor to the diode was studied. As a result of the increased time variation rate of the current due to the resonance between the inductor and the diode capacitance, a large electromotive force (emf) is produced driving the diode to the ON-state. Moreover, because of the anti-phase behavior of the emf and the current, the reflection is significantly suppressed regardless of the diode state. This is in contrast with the conventional rectifier, in which the diode will never be turned on, and thus neither rectification nor reflection suppressing mechanism start up, unless sufficient RF input signal is fed to the rectifier. Detailed analysis has shown that the package parasitic capacitance (Cp) of the diode is the key to leverage the full potential of the proposed rectifying mechanism. The fabricated rectifier designed considering the Cp effect demonstrated 21-dB improvement of RF input sensitivity. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Microwave rectifier / Diode / RF-DC Conversion Efficiency / Inductor / Resonance / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 413, MW2017-166, pp. 19-24, Jan. 2018. |
Paper # |
MW2017-166 |
Date of Issue |
2018-01-18 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2017-97 MW2017-166 Link to ES Tech. Rep. Archives: ED2017-97 MW2017-166 |
Conference Information |
Committee |
ED MW |
Conference Date |
2018-01-25 - 2018-01-26 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Compound semiconductor, High speed and High frequency devices/Microwave technologies |
Paper Information |
Registration To |
MW |
Conference Code |
2018-01-ED-MW |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
High RF-Input-Sensitivity Diode Rectifier with Series Inductor |
Sub Title (in English) |
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Keyword(1) |
Microwave rectifier |
Keyword(2) |
Diode |
Keyword(3) |
RF-DC Conversion Efficiency |
Keyword(4) |
Inductor |
Keyword(5) |
Resonance |
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1st Author's Name |
Katsuyuki Tanaka |
1st Author's Affiliation |
Shibaura Institute of Technology (Shibaura Inst. of Tech.) |
2nd Author's Name |
Shinichi Tanaka |
2nd Author's Affiliation |
Shibaura Institute of Technology (Shibaura Inst. of Tech.) |
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Speaker |
Author-1 |
Date Time |
2018-01-26 09:30:00 |
Presentation Time |
25 minutes |
Registration for |
MW |
Paper # |
ED2017-97, MW2017-166 |
Volume (vol) |
vol.117 |
Number (no) |
no.412(ED), no.413(MW) |
Page |
pp.19-24 |
#Pages |
6 |
Date of Issue |
2018-01-18 (ED, MW) |
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