Paper Abstract and Keywords |
Presentation |
2017-12-22 11:15
Electric properties in Al-N codoped p-type 4H-SiC epilayers
-- Comparison between temperature dependent resistivity in Al-doped and codoped samples -- Atsuki Hidaka, Akinobu Takeshita, Tatsuya Imamura, kota Takano, Kazuya Okuda, Shinji Ozawa, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-14 SDM2017-75 Link to ES Tech. Rep. Archives: EID2017-14 SDM2017-75 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is required to reduce the resistance in thick p+-type SiC substrate that is a collector of n-channel IGBTs and to obtain high quality crystal. It is reported that codoping of Al and N in heavily Al-doped p-type 4H-SiC can form high quality epilayers. In this study, electrical properties of Al-N codoped p-type 4H-SiC epilayers are investigated. It is found that the codoping of N makes nearest-neighbor hopping conduction dominant at temperatures higher in the singly-doped samples. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
p-type 4H-SiC / Heavily Al-doped 4H-SiC / Heavily Al-N codoped 4H-SiC / Conduction mechanism / Temperature-dependent resistivity / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 373, SDM2017-75, pp. 13-16, Dec. 2017. |
Paper # |
SDM2017-75 |
Date of Issue |
2017-12-15 (EID, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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EID2017-14 SDM2017-75 Link to ES Tech. Rep. Archives: EID2017-14 SDM2017-75 |
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