Paper Abstract and Keywords |
Presentation |
2017-12-22 14:45
Modification effects of ferroelectric thick-film properties on silicon substrates by proton beam irradiation Jun Hirade, Masaki Yamaguchi (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.) EID2017-22 SDM2017-83 Link to ES Tech. Rep. Archives: EID2017-22 SDM2017-83 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Ferroelectric thin films deposited on silicon substrates are expected to be applied to nonvolatile memories,
photonic crystals, piezoelectric MEMS, and the like. However, when considering piezoelectric application, thick film
patterning problem arises. A proton is an elementary particle having a mass of about 1,800 times that of an electron.
Therefore, it is considered that the scattering inside the substance is less than the electron. Thus, we are proposing a
new processing technology using proton beam. In this report, we investigated the influence of proton irradiation on bismuth
titanate thick film, which is a lead-free ferroelectric material on a silicon substrate. When the proton beam was irradiated on
the crystallized film, it was confirmed that the crystallinity was deteriorated by the increase in irradiation amount from the
measurement result of X-ray diffraction intensity and ferroelectric properties. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Proton beam / Bi4Ti3O12 / / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 373, SDM2017-83, pp. 57-62, Dec. 2017. |
Paper # |
SDM2017-83 |
Date of Issue |
2017-12-15 (EID, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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EID2017-22 SDM2017-83 Link to ES Tech. Rep. Archives: EID2017-22 SDM2017-83 |
Conference Information |
Committee |
SDM EID |
Conference Date |
2017-12-22 - 2017-12-22 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyoto University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Si, Si-related materials, device process, electron devices, and display technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2017-12-SDM-EID |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Modification effects of ferroelectric thick-film properties on silicon substrates by proton beam irradiation |
Sub Title (in English) |
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Keyword(1) |
Proton beam |
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Bi4Ti3O12 |
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1st Author's Name |
Jun Hirade |
1st Author's Affiliation |
Shibaura Institute of Technology (Shibaura Inst. of Tech.) |
2nd Author's Name |
Masaki Yamaguchi |
2nd Author's Affiliation |
Shibaura Institute of Technology (Shibaura Inst. of Tech.) |
3rd Author's Name |
Yoichiro Masuda |
3rd Author's Affiliation |
Hachinohe Institute of Technology (Hachinohe Inst. of Tech.) |
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Speaker |
Author-1 |
Date Time |
2017-12-22 14:45:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
EID2017-22, SDM2017-83 |
Volume (vol) |
vol.117 |
Number (no) |
no.372(EID), no.373(SDM) |
Page |
pp.57-62 |
#Pages |
6 |
Date of Issue |
2017-12-15 (EID, SDM) |
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