Paper Abstract and Keywords |
Presentation |
2017-12-22 13:15
Flexible Device Applications Using GaSnO Thin Films Ryo Takagi (Ryukoku Univ.), Kenta Umeda (NAIST), Tokiyoshi Matsuda (Ryukoku Univ.), Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) EID2017-16 SDM2017-77 Link to ES Tech. Rep. Archives: EID2017-16 SDM2017-77 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Thin-film transistors (TFTs) and thermoelectric conversion elements were evaluated by using an amorphous Ga-Sn-O (a-GTO) thin films of rare metal-free oxide semiconductors to be applied to flexible devices. GTO TFTs was fabricated using RF magnetron sputtering at room temperature, and we succeeded in operating as TFTs. The thermoelectric conversion element was also fabricated using RF magnetron sputtering at room temperature on a plastic substrate to evaluate the thermoelectric properties of the GTO film. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
RF Magnetron Sputtering / Amorphous Ga-Sn-O(a-GTO) Thin Film / Oxide Semiconductor / Flexible / Room Temperature / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 373, SDM2017-77, pp. 23-28, Dec. 2017. |
Paper # |
SDM2017-77 |
Date of Issue |
2017-12-15 (EID, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
EID2017-16 SDM2017-77 Link to ES Tech. Rep. Archives: EID2017-16 SDM2017-77 |
Conference Information |
Committee |
SDM EID |
Conference Date |
2017-12-22 - 2017-12-22 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyoto University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Si, Si-related materials, device process, electron devices, and display technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2017-12-SDM-EID |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Flexible Device Applications Using GaSnO Thin Films |
Sub Title (in English) |
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Keyword(1) |
RF Magnetron Sputtering |
Keyword(2) |
Amorphous Ga-Sn-O(a-GTO) Thin Film |
Keyword(3) |
Oxide Semiconductor |
Keyword(4) |
Flexible |
Keyword(5) |
Room Temperature |
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1st Author's Name |
Ryo Takagi |
1st Author's Affiliation |
Ryukoku Universituy (Ryukoku Univ.) |
2nd Author's Name |
Kenta Umeda |
2nd Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
3rd Author's Name |
Tokiyoshi Matsuda |
3rd Author's Affiliation |
Innovative Materials and Process Research Center Ryukoku University (Ryukoku Univ.) |
4th Author's Name |
Mutsunori Uenuma |
4th Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
5th Author's Name |
Mutsumi Kimura |
5th Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
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Speaker |
Author-1 |
Date Time |
2017-12-22 13:15:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
EID2017-16, SDM2017-77 |
Volume (vol) |
vol.117 |
Number (no) |
no.372(EID), no.373(SDM) |
Page |
pp.23-28 |
#Pages |
6 |
Date of Issue |
2017-12-15 (EID, SDM) |
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