Paper Abstract and Keywords |
Presentation |
2017-12-22 10:45
Conduction mechanisms in heavily Al-doped 4H-SiC epilayers
-- Dependencies of resistivity on Al concentration and temperature -- Shinji Ozawa, Akinobu Takeshita, TAtsuya imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazuoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-12 SDM2017-73 Link to ES Tech. Rep. Archives: EID2017-12 SDM2017-73 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to reduce the resistance in thick p+-type SiC substrates that are collectors of n-channel IGBTs. However, it is not clear that the relationships between its conduction mechanisms and Al concentration or measurement temperature in heavily Al-doped 4H-SiC. Therefore, we measured the temperature-dependent resistivity in heavily-doped 4H-SiC with several Al concentrations by a van der Pauw method, and then elucidated the relationships. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SiC IGBT / p-type 4H-SiC / Heavily Al-doped 4H-SiC / Temperature-dependent resistivity / Conduction mechanism / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 373, SDM2017-73, pp. 5-8, Dec. 2017. |
Paper # |
SDM2017-73 |
Date of Issue |
2017-12-15 (EID, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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EID2017-12 SDM2017-73 Link to ES Tech. Rep. Archives: EID2017-12 SDM2017-73 |
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