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Paper Abstract and Keywords
Presentation 2017-12-22 10:45
Conduction mechanisms in heavily Al-doped 4H-SiC epilayers -- Dependencies of resistivity on Al concentration and temperature --
Shinji Ozawa, Akinobu Takeshita, TAtsuya imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazuoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-12 SDM2017-73 Link to ES Tech. Rep. Archives: EID2017-12 SDM2017-73
Abstract (in Japanese) (See Japanese page) 
(in English) To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to reduce the resistance in thick p+-type SiC substrates that are collectors of n-channel IGBTs. However, it is not clear that the relationships between its conduction mechanisms and Al concentration or measurement temperature in heavily Al-doped 4H-SiC. Therefore, we measured the temperature-dependent resistivity in heavily-doped 4H-SiC with several Al concentrations by a van der Pauw method, and then elucidated the relationships.
Keyword (in Japanese) (See Japanese page) 
(in English) SiC IGBT / p-type 4H-SiC / Heavily Al-doped 4H-SiC / Temperature-dependent resistivity / Conduction mechanism / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 373, SDM2017-73, pp. 5-8, Dec. 2017.
Paper # SDM2017-73 
Date of Issue 2017-12-15 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF EID2017-12 SDM2017-73 Link to ES Tech. Rep. Archives: EID2017-12 SDM2017-73

Conference Information
Committee SDM EID  
Conference Date 2017-12-22 - 2017-12-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Si, Si-related materials, device process, electron devices, and display technology 
Paper Information
Registration To SDM 
Conference Code 2017-12-SDM-EID 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Conduction mechanisms in heavily Al-doped 4H-SiC epilayers 
Sub Title (in English) Dependencies of resistivity on Al concentration and temperature 
Keyword(1) SiC IGBT  
Keyword(2) p-type 4H-SiC  
Keyword(3) Heavily Al-doped 4H-SiC  
Keyword(4) Temperature-dependent resistivity  
Keyword(5) Conduction mechanism  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Shinji Ozawa  
1st Author's Affiliation Osaka Electro-Communication University (OECU)
2nd Author's Name Akinobu Takeshita  
2nd Author's Affiliation Osaka Electro-Communication University (OECU)
3rd Author's Name TAtsuya imamura  
3rd Author's Affiliation Osaka Electro-Communication University (OECU)
4th Author's Name Kota Takano  
4th Author's Affiliation Osaka Electro-Communication University (OECU)
5th Author's Name Kazuya Okuda  
5th Author's Affiliation Osaka Electro-Communication University (OECU)
6th Author's Name Atsuki Hidaka  
6th Author's Affiliation Osaka Electro-Communication University (OECU)
7th Author's Name Hideharu Matsuura  
7th Author's Affiliation Osaka Electro-Communication University (OECU)
8th Author's Name Shiyang Ji  
8th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
9th Author's Name Kazuma Eto  
9th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
10th Author's Name Kazuoshi Kojima  
10th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
11th Author's Name Tomohisa Kato  
11th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
12th Author's Name Sadafumi Yoshida  
12th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
13th Author's Name Hajime Okumura  
13th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker Author-1 
Date Time 2017-12-22 10:45:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # EID2017-12, SDM2017-73 
Volume (vol) vol.117 
Number (no) no.372(EID), no.373(SDM) 
Page pp.5-8 
#Pages
Date of Issue 2017-12-15 (EID, SDM) 


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