IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
... (for ESS/CS/ES/ISS)
Tech. Rep. Archives
... (for ES/CS)
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2017-12-22 11:00
Temperature Dependent Hall Coefficient in Heavily Al-Doped 4H-SiC -- Relationship between Inversion of Hall Coefficient and Conduction Mechanism --
Rinya Nishihata, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Shinji Ozawa, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST)
Abstract (in Japanese) (See Japanese page) 
(in English) To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to reduce the resistance in thick p+-type SiC substrates that are collectors of n-channel IGBTs. In p-type 6H-SiC with an Al concentration (NAl) of 1.6×1019 cm-3, it was reported that a decrement in its Hall coefficient appeared in a hopping conduction region, not a band conduction region, and that an inversion of its Hall coefficient occurred at a lower temperature. On the other hand, in p-type 4H-SiC with NAl of higher than 2×1019 cm-3, it is found that the decrement and inversion of their Hall coefficients occur in the band conduction region. Moreover, the temperature at which the inversion of the Hall coefficient occurs becomes higher as NAl is increased.
Keyword (in Japanese) (See Japanese page) 
(in English) Heavily Al-doped 4H-SiC / Resistivity / Hall-effect measurement / Hall coefficient / Conduction mechanism / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 373, SDM2017-74, pp. 9-12, Dec. 2017.
Paper # SDM2017-74 
Date of Issue 2017-12-15 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380

Conference Information
Committee SDM EID  
Conference Date 2017-12-22 - 2017-12-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Si, Si-related materials, device process, electron devices, and display technology 
Paper Information
Registration To SDM 
Conference Code 2017-12-SDM-EID 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Temperature Dependent Hall Coefficient in Heavily Al-Doped 4H-SiC 
Sub Title (in English) Relationship between Inversion of Hall Coefficient and Conduction Mechanism 
Keyword(1) Heavily Al-doped 4H-SiC  
Keyword(2) Resistivity  
Keyword(3) Hall-effect measurement  
Keyword(4) Hall coefficient  
Keyword(5) Conduction mechanism  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Rinya Nishihata  
1st Author's Affiliation Osaka Electro-Communication University (OECU)
2nd Author's Name Akinobu Takeshita  
2nd Author's Affiliation Osaka Electro-Communication University (OECU)
3rd Author's Name Tatsuya Imamura  
3rd Author's Affiliation Osaka Electro-Communication University (OECU)
4th Author's Name Kota Takano  
4th Author's Affiliation Osaka Electro-Communication University (OECU)
5th Author's Name Kazuya Okuda  
5th Author's Affiliation Osaka Electro-Communication University (OECU)
6th Author's Name Shinji Ozawa  
6th Author's Affiliation Osaka Electro-Communication University (OECU)
7th Author's Name Atsuki Hidaka  
7th Author's Affiliation Osaka Electro-Communication University (OECU)
8th Author's Name Hideharu Matsuura  
8th Author's Affiliation Osaka Electro-Communication University (OECU)
9th Author's Name Shiyang Ji  
9th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
10th Author's Name Kazuma Eto  
10th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
11th Author's Name Kazutoshi Kojima  
11th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
12th Author's Name Tomohisa Kato  
12th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
13th Author's Name Sadafumi Yoshida  
13th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
14th Author's Name Hajime Okumura  
14th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker
Date Time 2017-12-22 11:00:00 
Presentation Time 15 
Registration for SDM 
Paper # IEICE-EID2017-13,IEICE-SDM2017-74 
Volume (vol) IEICE-117 
Number (no) no.372(EID), no.373(SDM) 
Page pp.9-12 
#Pages IEICE-4 
Date of Issue IEICE-EID-2017-12-15,IEICE-SDM-2017-12-15 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan